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China factory - Walton Electronics Co., Ltd.

Walton Electronics Co., Ltd.

  • China,Shenzhen
  • Active Member

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China MR0A08BCYS35 MRAM Magnetoresistive Random Access Memory MRAM Memory Data Storage
China MR0A08BCYS35 MRAM Magnetoresistive Random Access Memory MRAM Memory Data Storage

  1. China MR0A08BCYS35 MRAM Magnetoresistive Random Access Memory MRAM Memory Data Storage
  2. China MR0A08BCYS35 MRAM Magnetoresistive Random Access Memory MRAM Memory Data Storage

MR0A08BCYS35 MRAM Magnetoresistive Random Access Memory MRAM Memory Data Storage

  1. MOQ: 10pcs
  2. Price: Contact us to win best offer
  3. Get Latest Price
Payment Terms L/C, T/T, Western Union, PayPal
Supply Ability 10000pcs/months
Delivery Time 1-3week days
Packaging Details standard
Package/cabinet TSOP-44
Type of interface Parallel
Series MR0A08B
Installation style SMD/SMT
Type of product MRAM
Unit weight 5.066 g
Brand Name Original
Model Number MR0A08BCYS35
Certification ISO9001:2015standard
Place of Origin Original

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms L/C, T/T, Western Union, PayPal Supply Ability 10000pcs/months
Delivery Time 1-3week days Packaging Details standard
Package/cabinet TSOP-44 Type of interface Parallel
Series MR0A08B Installation style SMD/SMT
Type of product MRAM Unit weight 5.066 g
Brand Name Original Model Number MR0A08BCYS35
Certification ISO9001:2015standard Place of Origin Original
High Light MR0A08BCYS35 MRAMSMT Magnetoresistive Random Access MemoryData Storage Magnetoresistive Random Access Memory

MR0A08BCYS35 Magnetoresistive Random Access Memory (MRAM) EHHD024A0A41Z DE118-RS-20/6.35 Memory Data Storage

 

FEATURES BENEFITS

• One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design

• Improves reliability by replacing battery-backed SRAM

• 3.3 Volt power supply

• Fast 35 ns read/write cycle

• SRAM compatible timing

• Native non-volatility

• Unlimited read & write endurance

• Data always non-volatile for >20 years at temperature

• Commercial and industrial temperatures

• All products meet MSL-3 moisture sensitivity level

• RoHS-Compliant TSOP2 and BGA packages

 

BENEFITS

• One memory replaces FLASH, SRAM, EEPROM and MRAM in system for simpler, more efficient design

• Improves reliability by replacing battery-backed SRAM

 

Product Category: MRAM
TSOP-44
Parallel
1 Mbit
128 k x 8
8 bit
35 ns
3 V
3.6 V
55 mA
- 40 C
+ 85 C
MR0A08B
Tray
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: MRAM
135
Subcategory: Memory & Data Storage
Unit Weight: 0.178707 oz

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Trading Company

  • Year Established:

    2004

  • Employee Number:

    50~100

  • Ecer Certification:

    Active Member

Founded in 2004, Walton Electronics CO.,LTD is a scaled and professional independent distributor of electronic components in Shenzhen , China. Committed to the world's leading brands of electronic components distribution integration services, mainly engaged in active components , integrated circ... Founded in 2004, Walton Electronics CO.,LTD is a scaled and professional independent distributor of electronic components in Shenzhen , China. Committed to the world's leading brands of electronic components distribution integration services, mainly engaged in active components , integrated circ...

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  • Walton Electronics Co., Ltd.
  • 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN
  • https://www.waltonele.com/

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