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China factory - Walton Electronics Co., Ltd.

Walton Electronics Co., Ltd.

  • China,Shenzhen
  • Active Member

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China FCB36N60NTM SMD SMT MOSFET Transistor IC Chip N Channel 600V
China FCB36N60NTM SMD SMT MOSFET Transistor IC Chip N Channel 600V

  1. China FCB36N60NTM SMD SMT MOSFET Transistor IC Chip N Channel 600V

FCB36N60NTM SMD SMT MOSFET Transistor IC Chip N Channel 600V

  1. MOQ: 10pcs
  2. Price: 3-5.00USD/pc
  3. Get Latest Price
Payment Terms T/T,Western Union,PayPay
Supply Ability 1000pcs/months
Delivery Time 2-3 workdays
Packaging Details Tube,Reel,Tray
Transistor Polarity N Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600V
Rds On - Drain-Source Resistance 90 mOhms
Pd - Power Dissipation 312 W
Configuration Single
Brand Name original
Model Number FCB36N60NTM
Certification ISO9001:2015standard
Place of Origin original

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T,Western Union,PayPay Supply Ability 1000pcs/months
Delivery Time 2-3 workdays Packaging Details Tube,Reel,Tray
Transistor Polarity N Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600V Rds On - Drain-Source Resistance 90 mOhms
Pd - Power Dissipation 312 W Configuration Single
Brand Name original Model Number FCB36N60NTM
Certification ISO9001:2015standard Place of Origin original
High Light FCB36N60NTM Transistor IC ChipFCB36N60NTM MOSFET TransistorMOSFET Transistor N Channel 600V

FCB36N60NTM MOSFET Transistors Discrete Semiconductors original

 

 

Product Attribute Attribute Value
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: SC-70-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 36 A
Rds On - Drain-Source Resistance: 90 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 112 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 312 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Configuration: Single
Fall Time: 4 ns
Forward Transconductance - Min: 41 S
Height: 4.83 mm
Length: 10.67 mm
Product Type: MOSFET
Rise Time: 22 ns
Series: FCB36N60N
Factory Pack Quantity: 800
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 94 ns
Typical Turn-On Delay Time: 23 ns
Width: 9.65 mm
Unit Weight: 4 g

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Trading Company

  • Year Established:

    2004

  • Employee Number:

    50~100

  • Ecer Certification:

    Active Member

Founded in 2004, Walton Electronics CO.,LTD is a scaled and professional independent distributor of electronic components in Shenzhen , China. Committed to the world's leading brands of electronic components distribution integration services, mainly engaged in active components , integrated circ... Founded in 2004, Walton Electronics CO.,LTD is a scaled and professional independent distributor of electronic components in Shenzhen , China. Committed to the world's leading brands of electronic components distribution integration services, mainly engaged in active components , integrated circ...

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  • Walton Electronics Co., Ltd.
  • 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN
  • https://www.waltonele.com/

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