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Walton Electronics Co., Ltd.

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China ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB
China ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

  1. China ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

ASI MRF9045LR1 Transistors RF Bipolar Transistors 18.8dB

  1. MOQ: 10pcs
  2. Price: 9.43-9.88SD/PCS
  3. Get Latest Price
Payment Terms L/C, Western Union,palpay
Supply Ability 1000pcs/months
Delivery Time 2-3 workdays
Packaging Details standard
product name MRF9045LR1
Product Category RF Bipolar Transistors
Technology Si
Product Type RF Bipolar Transistors
Gain 18.8dB
Mounting Style SMD/SMT
Brand Name original
Model Number MRF9045LR1
Certification ISO9001:2015standard
Place of Origin original

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms L/C, Western Union,palpay Supply Ability 1000pcs/months
Delivery Time 2-3 workdays Packaging Details standard
product name MRF9045LR1 Product Category RF Bipolar Transistors
Technology Si Product Type RF Bipolar Transistors
Gain 18.8dB Mounting Style SMD/SMT
Brand Name original Model Number MRF9045LR1
Certification ISO9001:2015standard Place of Origin original
High Light MRF9045LR1 RF Bipolar TransistorsRF Bipolar Transistors 18.8dBASI MRF9045LR1

MRF9045LR1Transistors RF Bipolar Transistors Si original in stock

 

The ASI MRF9045LR1 is a high voltage, gold-metalized,

laterally diffused metal oxide semiconductor. Ideal for today's

 RF power amplifier Applications.

 

 

RF MOSFET Transistors
RoHS: Details
N-Channel
Si
4.25 A
65 V
945 MHz
18.8 dB
60 W
SMD/SMT
NI-360
Tray
Configuration: Single
Forward Transconductance - Min: 3 S
Pd - Power Dissipation: 117 W
Product Type: RF MOSFET Transistors
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: 15 V
Vgs th - Gate-Source Threshold Voltage: 4.8 V
Unit Weight: 0.032480 oz
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
Nomin
MRF9045LR1 MRF9045LSR1
5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed
for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high ga
in and broadband performance of these
devices make them ideal for large
signal, common
source amplifier applica-
tions in 28 volt base station equipment.
Typical Two
Tone Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 18.8 dB
Efficiency — 42%
IMD —
32 dBc
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
μ′′
No

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Trading Company

  • Year Established:

    2004

  • Employee Number:

    50~100

  • Ecer Certification:

    Active Member

Founded in 2004, Walton Electronics CO.,LTD is a scaled and professional independent distributor of electronic components in Shenzhen , China. Committed to the world's leading brands of electronic components distribution integration services, mainly engaged in active components , integrated circ... Founded in 2004, Walton Electronics CO.,LTD is a scaled and professional independent distributor of electronic components in Shenzhen , China. Committed to the world's leading brands of electronic components distribution integration services, mainly engaged in active components , integrated circ...

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  • Walton Electronics Co., Ltd.
  • 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN
  • https://www.waltonele.com/

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