Payment Terms | T/T, Western Union, MoneyGram, Paypal |
Supply Ability | 10000 pcs/month |
Delivery Time | 5-8 days |
Packaging Details | Carton |
Customizable | Positive |
Machine Models | Protos, Passim, MK8, MK9, |
Sea transportation | With larger orders only |
Other Models | Skoda, CME, Sasib |
Port of Shipment | Guangzhou, Shanghai |
Cigarette Diameter | 5.4mm - 8.0mm |
Brand Name | Upperbond |
Model Number | Maker |
Certification | CE, ISO |
Place of Origin | China |
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Product Specification
Payment Terms | T/T, Western Union, MoneyGram, Paypal | Supply Ability | 10000 pcs/month |
Delivery Time | 5-8 days | Packaging Details | Carton |
Customizable | Positive | Machine Models | Protos, Passim, MK8, MK9, |
Sea transportation | With larger orders only | Other Models | Skoda, CME, Sasib |
Port of Shipment | Guangzhou, Shanghai | Cigarette Diameter | 5.4mm - 8.0mm |
Brand Name | Upperbond | Model Number | Maker |
Certification | CE, ISO | Place of Origin | China |
High Light | Kretek Making Machine Irfz44nl ,Kretek Making Machine Electronic Parts ,Cigarette Machine Electronic Parts |
Hauni Protos Nano Kretek Making Machine Electronic Part Irfz44nl
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
1. Source-Drain Ratings and Characteristics
Parameter | Typ- | Max. | |
Is | Continuous Source Current (Body Diode) | — | 49 |
Ism | Pulsed Source Current (Body Diode)① | — | 160 |
VsD | Diode Forward Voltage | — | 1.3 |
trr | Reverse Recovery Time | 63 | 95 |
Qrr | Reverse Recovery Charge | 170 | 260 |
2. Bipolar Junction Transistors
The first bipolar junction transistors were invented by Bell Labs' William Shockley, which applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists Gordon Teal and Morgan Sparks had successfully produced a working bipolar NPN junction amplifying germanium transistor.
3. High-Frequency Transistor
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating up to 60 MHz. These were made by etching depressions into an n-type germanium base from both sides with jets of Indium(III) sulfate until it was a few ten-thousandths of an inch thick. Indium electroplated into the depressions formed the collector and emitter.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Exporter
Year Established:
2007
Employee Number:
100~200
Ecer Certification:
Verified Supplier
COMPANY PROFILE HK UPPERBOND INDUSTRIAL LIMITED, an innovative company that specializes in manufacturing and distribution of tobacco machinery and spare parts, as well as providing top-notch technical services to tobacco industry. Our comprehensive range of products includes Heat-N... COMPANY PROFILE HK UPPERBOND INDUSTRIAL LIMITED, an innovative company that specializes in manufacturing and distribution of tobacco machinery and spare parts, as well as providing top-notch technical services to tobacco industry. Our comprehensive range of products includes Heat-N...
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