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Beijing Silk Road Enterprise Management Services Co.,LTD

  • China,Shenzhen
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China 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
China 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

  1. China 8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge

  1. MOQ: 1000-2000 PCS
  2. Price: Negotiated
  3. Get Latest Price
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Product name Mosfet Power Transistor
VDSS 6.0 A
APPLICATION Power Management
FEATURE Low Gate Charge
Power mosfet transistor SOT-23-6L Plastic-Encapsulate
Place of Origin ShenZhen China
Brand Name OTOMO
Certification RoHS、SGS
Model Number 8H02ETS

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  1. Product Details
  2. Company Details

Product Specification

Packaging Details Boxed Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union Supply Ability 18,000,000PCS / Per Day
Product name Mosfet Power Transistor VDSS 6.0 A
APPLICATION Power Management FEATURE Low Gate Charge
Power mosfet transistor SOT-23-6L Plastic-Encapsulate Place of Origin ShenZhen China
Brand Name OTOMO Certification RoHS、SGS
Model Number 8H02ETS
High Light Dual N Channel Mosfet Power TransistorMosfet Power Transistor 20VMosfet Power Transistor Low Gate Charge

20V N+N-Channel Enhancement Mode MOSFET

 

 

 

DESCRIPTION

The 8H02ETSuses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V.

 

 

GENERAL FEATURES

VDS = 20V,ID = 7A

8H02TS RDS(ON) < 28mΩ @ VGS=2.5V

RDS(ON) < 26mΩ @ VGS=3.1V

RDS(ON) < 22mΩ @ VGS=4V

RDS(ON) < 20mΩ @ VGS=4.5V

ESD Rating:2000V HBM

 

 

Application

Battery protection

Load switch Power management

 

 

 

 

 

Package Marking and Ordering Information

 

 

Product ID Pack Marking Qty(PCS)
8H02ETS TSSOP-8 8H02ETS WW YYYY 5000/3000

 

 

 

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

 

 

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±12 V
Drain Current-Continuous@ Current-Pulsed (Note 1) ID 7 V
Maximum Power Dissipation PD 1.5 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150
Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 ℃/W

 

 

 

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

 

 

 

 

NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
 
 
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
 
 
 
 
 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    2009

  • Employee Number:

    80~120

  • Ecer Certification:

    Verified Supplier

Beijing Silk Road Enterprise Management Services Co.,LTD is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. &n... Beijing Silk Road Enterprise Management Services Co.,LTD is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. &n...

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  • https://www.stm32ic.com/

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