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Beijing Silk Road Enterprise Management Services Co.,LTD

  • China,Shenzhen
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China RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
China RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

  1. China RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

  1. MOQ: 1000-2000 PCS
  2. Price: Negotiated
  3. Get Latest Price
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Product name Mosfet Power Transistor
VDSS 6.0 A
APPLICATION Power Management
FEATURE Low Gate Charge
Power mosfet transistor SOT-23-6L Plastic-Encapsulate
Place of Origin ShenZhen China
Brand Name OTOMO
Certification RoHS、SGS
Model Number 8205A

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  1. Product Details
  2. Company Details

Product Specification

Packaging Details Boxed Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union Supply Ability 18,000,000PCS / Per Day
Product name Mosfet Power Transistor VDSS 6.0 A
APPLICATION Power Management FEATURE Low Gate Charge
Power mosfet transistor SOT-23-6L Plastic-Encapsulate Place of Origin ShenZhen China
Brand Name OTOMO Certification RoHS、SGS
Model Number 8205A
High Light RoHS Mosfet Power Transistor6.0 A high current mosfet switch8205A Mosfet Power Transistor

8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET

 

 

General Description

 

 

VDSS= V ID= 6.0 A

z 20

G1

6

D1,D2

5

G2

4

  z  

RDS(on) < Ω@V = 4.5V

25m

GS

  z  

RDS(on) < Ω@V = 2.5V

32m

GS

1 2 3

S1

D1,D2 S2

 

 

 

 

FEATURE

 

z TrenchFET Power MOSFET

z Excellent RDS(on)

z Low Gate Charge

z High Power and Current Handing Capability

z Surface Mount Package

 

 

APPLICATION

 

z Battery Protection

z Load Switch

z Power Management

 

 

Parameter Symbol Test Condition Min Typ Max Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V
Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S
Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V

 

 

DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance Ciss 800 pF
Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF
Reverse Transfer Capacitance Crss 125 pF

 

 

SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time td(on) 18 ns
Turn-on rise time tr VDD=10V,VGS=4V, 5 ns
Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns
Turn-off fall time tf 20 ns
Total Gate Charge Qg 11 nC
Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC
Gate-Drain Charge Qgd 2.5 nC

 

 

Notes :

1. Repetitive rating:Pluse width limited by maximum junction temperature

2. Surface Mounted on FR4 board,t≤10 sec.

3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

4. Guaranteed by design, not subject to production.

 

 

 

 

 

SOT-23-6L Package Outline Dimensions

 

 

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    2009

  • Employee Number:

    80~120

  • Ecer Certification:

    Verified Supplier

Beijing Silk Road Enterprise Management Services Co.,LTD is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. &n... Beijing Silk Road Enterprise Management Services Co.,LTD is a professional company focus on integrated circuit ic business. Beijing Silk Road will also responsible with exporting and logistic business. there is professional factory Beijing Silk Road which focus on desigining and manufacture. &n...

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