Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability | 999999 |
Delivery Time | 1-3 days |
Packaging Details | standard |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
Rds On (Max) @ Id, Vgs | 22mOhm @ 4.1A, 4.5V |
Brand Name | Infineon |
Model Number | IRF7401TRPBF |
Place of Origin | original |
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Product Specification
Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram | Supply Ability | 999999 |
Delivery Time | 1-3 days | Packaging Details | standard |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 8.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V | Rds On (Max) @ Id, Vgs | 22mOhm @ 4.1A, 4.5V |
Brand Name | Infineon | Model Number | IRF7401TRPBF |
Place of Origin | original |
IRF7401TRPBF MOSFET Power Electronics N-Channel 20V Generation V Technology Package 8-SOIC
FET Type | | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 4.1A, 4.5V | |
Vgs(th) (Max) @ Id | 700mV @ 250µA (Min) | |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | 8-SO | |
Package / Case |
Generation V Technology
Ultra Low On-Resistance
N-ChannelMosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt RatingFast Switching
Lead-Free
Description:
Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient device for use in a widevariety of applications.
The SO 8 has been modified through a customizedleadframe for enhanced thermal characteristics andmultiple die capability making it ideal in a variety of power applications. Withtheseimprovements, multipledevices can be used in an application with dramaticallyreduced board space. The package is designed forvapor phase, infra red, or wave soldering techniques.Power dissipation of greater than 0.8V is possible ina typical PCB mount application.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer,Exporter,Trading Company,Seller,Other
Year Established:
2007
Total Annual:
300 million-400 million
Employee Number:
100~150
Ecer Certification:
Active Member
Sai Collie Technology Co., Ltd. is a leading independent supplier and distributor of electronic components, 2007, We have been focusing on providing original equipment manufacturers (OEMs) and contract electronics manufacturers (CEMs), which are hard to find, obsolete and hot-selling integ... Sai Collie Technology Co., Ltd. is a leading independent supplier and distributor of electronic components, 2007, We have been focusing on providing original equipment manufacturers (OEMs) and contract electronics manufacturers (CEMs), which are hard to find, obsolete and hot-selling integ...
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