Chongqing Silian Optoelectronic Science & Technology Co., Ltd.
| Payment Terms | Western Union, T/T, MoneyGram |
| Supply Ability | 20,000 pcs/month |
| Delivery Time | 5-8 weeks |
| Packaging Details | 1pcs/12pcs/25 pcs |
| Diameter | 150.1±0.1 |
| Flat Length | 47.5±1 |
| Bow | 0 ~ (-10) um |
| Color | Transparent; other colors |
| Material | High Purity and Monocrystalline AL2O3 |
| Surface Crystal Orientation | C-Plane 0°±0.1° |
| Primary Flat Orientation | A-plane 0°±0.5° |
| Broke Edge | ≤3mm |
| Brand Name | Silian |
| Model Number | Customized |
| Certification | SGS/ ISO |
| Place of Origin | Chongqing，China |
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Product Specification
| Payment Terms | Western Union, T/T, MoneyGram | Supply Ability | 20,000 pcs/month |
| Delivery Time | 5-8 weeks | Packaging Details | 1pcs/12pcs/25 pcs |
| Diameter | 150.1±0.1 | Flat Length | 47.5±1 |
| Bow | 0 ~ (-10) um | Color | Transparent; other colors |
| Material | High Purity and Monocrystalline AL2O3 | Surface Crystal Orientation | C-Plane 0°±0.1° |
| Primary Flat Orientation | A-plane 0°±0.5° | Broke Edge | ≤3mm |
| Brand Name | Silian | Model Number | Customized |
| Certification | SGS/ ISO | Place of Origin | Chongqing，China |
| High Light | SGS Al2O3 6 inch sapphire wafer ，SGS No Cracking 6 inch sapphire wafer ，SGS 150mm flat sapphire crystal | ||
6-inch sapphire substrate with good light transmittance
Product Description
The chemical composition of sapphire crystal is alumina, with the crystal structure hexagonal lattice. Sapphire is a commonly used substrate material for gallium nitride (GaN) epitaxial growth. It has ultra-high hardness, stable physical and chemical properties at high temperatures, excellent optical performance.
Technical Specification
| Properties | Unit | 6 inch substrate |
| Diameter | mm | 150.1±0.1 |
| Flat Length | mm | 47.5±1 |
| Material | High Purity and Monocrystalline AL2O3 | |
| Surface Crystal Orientation | C-Plane 0°±0.1° | |
| Primary Flat Orientation | A-plane 0°±0.5° | |
| Broke Edge | ≤3mm | |
| Crack | No Cracking | |
| Defect | No Wrappage,Twin Crystal or Crystal Boundary | |
| EPD | ＜1000/cm² | |
Performance research
The semi-polar and non-polar GaN can be grown on the sapphire substrate with some special planes like M-plane <1-100>and R-plane <1-102>. The semi-polar and non-polar GaN have good performance to improve the device droop effect, wavelength shift phenomenon and long wavelength band efficiency of LED device. Studies have shown that using the high-temperature AlN nucleation layer and the higher AlGaN growth temperature, or a buffer layer with the multilayer AlGaN, or using Si doping technique can effectively improve the crystal quality and the dislocation density of semi-polar and non-polar AlGaN thin films grown on sapphire substrates.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Importer,Exporter,Seller
Year Established:
2008
Total Annual:
65,000,000-70,000,000
Employee Number:
400~500
Ecer Certification：
Active Member
Chongqing Silian Optoelectronics Science & Technology Co., Ltd was founded by China Silian Instrument Group Co., Ltd for the development of LED industry. After the acquisition of Honeywell Sapphire business, the company has become China’s first enterprise with the world’s top-quality... Chongqing Silian Optoelectronics Science & Technology Co., Ltd was founded by China Silian Instrument Group Co., Ltd for the development of LED industry. After the acquisition of Honeywell Sapphire business, the company has become China’s first enterprise with the world’s top-quality...
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