3C-N SiC Wafer 4inch Silicon Carbide Prime Grade Dummy Grade High Electron

3C-N SiC wafer 4inch Silicon Carbide Prime Grade Dummy Grade High electron mobility RF LED

Description of 3C-N SiC Wafer:

We can offer 4-inch 3C-N Silicon Carbide Wafers with N-Type SiC Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with a diamond-like structure. It has several superior properties to the widely used 4H-SiC, such as higher electron mobility and saturation velocity. The performance of 3C-SiC power devices is expected to be better, cheaper, and easier to manufacture than the currently mainstream 4H-SiC wafer. It is exceptionally suitable for power electronic devices.

The Character of 3C-N SiC Wafer:

1. Wide Bandgap
High Breakdown Voltage: 3C-N SiC wafers have a wide bandgap (~3.0 eV), enabling high voltage operation and making them suitable for power electronics.
2. High Thermal Conductivity
Efficient Heat Dissipation: With a thermal conductivity of about 3.0 W/cm·K, these wafers can effectively dissipate heat, allowing devices to operate at higher power levels without overheating.
3. High Electron Mobility
Enhanced Performance: The high electron mobility (~1000 cm²/V·s) leads to faster switching speeds, making 3C-N SiC ideal for high-frequency applications.
4. Mechanical Strength
Durability: 3C-N SiC wafers exhibit excellent mechanical properties, including high hardness and resistance to wear, which enhances their reliability in various applications.
5. Chemical Stability
Corrosion Resistance: The material is chemically stable and resistant to oxidation, making it suitable for harsh environments.
6. Low Leakage Currents
Efficiency: The low leakage current in devices fabricated from 3C-N SiC wafers contributes to improved efficiency in power electronics.

Form of 3C-N SiC Wafer:

Comparison of properties of SiC:

Physical Photo of 3C-N SiC Wafer:

Applications of 3C-N SiC Wafer:

1. Power Electronics
High-Power Devices: Used in power MOSFETs and IGBTs due to their high breakdown voltage and thermal conductivity.
Switching Devices: Ideal for applications requiring high efficiency, such as DC-DC converters and inverters.
2. RF and Microwave Devices
High-Frequency Transistors: Utilized in RF amplifiers and microwave devices, benefiting from high electron mobility.
Radar and Communication Systems: Employed in satellite communications and radar technology for improved performance.
3. LED Technology
Blue and Ultraviolet LEDs: 3C-SiC can be used in the production of light-emitting diodes, particularly for blue and UV light applications.
4. High-Temperature Applications
Sensors: Suitable for high-temperature sensors used in automotive and industrial applications.
Aerospace: Utilized in components that must operate effectively in extreme environments.

Application Picture of 3C-N SiC Wafer:

Packing and Shipping of 3C-N SiC Wafer:

Customized:

Customized SiC crystal products can be made to meet customer's particular requirements and specifications. Epi-wafers can be custom made upon request.

Product Recommend:

1.2 inch 3inch  4 inch 6 inch 8inch Sic Wafer 4H-N/Semi Type 

2.6inch SiC Wafer 4H/6H-P