SiC Substrates 2/3/4/6/8 Inch HPSI Production Dummy Research Grade

Product Specification

SiC Substrates 2/3/4/6/8 inch HPSI Production Dummy Research Grade

1. Abstract

Our SiC Substrates 2/3/4/6/8 inch HPSI Production Dummy Research Grade is designed for advanced research applications, providing high-quality silicon carbide substrates that facilitate cutting-edge semiconductor research and development.

2. Product & Compony Description

2.1 Product Description:

Our SiC Substrates 2/3/4/6/8 inch HPSI Production Dummy Research Grade is engineered to meet the rigorous standards of research laboratories. 

• High Breakdown Voltage: SiC substrates enable the fabrication of devices with significantly higher breakdown voltages compared to silicon. 

• Thermal Stability: SiC can operate at higher temperatures (up to 600°C) without performance degradation. This allows semiconductor devices to function reliably in extreme conditions, which is essential for applications in automotive and aerospace industries.

• Improved Efficiency: SiC substrates contribute to lower on-resistance and faster switching speeds in semiconductor devices. This translates to reduced energy losses and improved overall efficiency in power conversion systems.

• Reduced Size and Weight: Due to their ability to handle higher power densities, SiC devices can be smaller and lighter than their silicon counterparts. This is particularly advantageous in applications where space and weight are critical, such as electric vehicles and portable electronics.

2.2 Company Description:

Our company (ZMSH) has been focusing on the Sapphire field for over 10 years, with professional factory & sales teams. We've got plenty experience in Customized Products. We also undertake customised design and can be OEM. We ZMSH will be the best choice considering both price and quality. Feel free to reach out!

3. Applications

Unlock the potential of your research and development projects with Our SiC Substrates 2/3/4/6/8 Inch HPSI Production Dummy Research Grade. Designed specifically for advanced semiconductor applications, our research-grade substrates offer exceptional quality and reliability.

• Lasers: SiC substrates enable the production of high-power laser diodes that operate efficiently in the UV and blue light regions. Their excellent thermal conductivity and durability make them ideal for applications requiring reliable performance in extreme conditions.
• Consumer Electronics: SiC substrates enhance power management ICs, allowing for more efficient power conversion and longer battery life. They also facilitate fast charging solutions, enabling smaller and lighter chargers while maintaining high performance.
• Electric Vehicle Onboard Batteries: SiC substrates improved energy efficiency and extending driving range. Their application in fast-charging infrastructure supports quicker charging times, enhancing convenience for EV users.​

4. Product Display - ZMSH

5. SiC Substrate Specifications

6. Common Questions

6.1 A: What sizes are SiC substrates available in?

Q: SiC substrates are available in various sizes, commonly ranging from 2 inches to 6 inches in diameter. We are capable of producing 8 inch ones. Other custom sizes may also be available based on specific application requirements.

6.2 A: What is the purpose of a dummy wafer?

Q: Dummy wafers are used primarily for testing and research purposes without the necessity for active device fabrication.

6.3 A: Can you provide custom specifications?

Q: We can discuss custom orders based on your specific research needs; please contact us for more information.