SiC Ingot Growth Furnace PVT HTCVD LPE Single Crystal SiC Boule Growth Furnace

Product Specification

SiC Ingot growth Furnace PVT HTCVD LPE single crystal SiC Boule growth furnace for 6inch 8inch SiC wafers product

SiC Ingot growth Furnace's abstract

The SiC Ingot Growth Furnace is an advanced system engineered for the high-efficiency growth of single crystal SiC Boules used in the production of 6-inch and 8-inch SiC wafers. Utilizing versatile growth methods including PVT (Physical Vapor Transport), HTCVD (High Temperature Chemical Vapor Deposition), and LPE (Liquid Phase Epitaxy), this furnace ensures optimal conditions for the formation of high-purity, low-defect SiC ingots.
 

With precision control over temperature, pressure, and vacuum, the SiC Ingot Growth Furnace enables stable and scalable SiC Boule growth, meeting the demands of next-generation semiconductor applications such as electric vehicles (EVs), renewable energy, and high-power electronics. Its modular, customizable design allows manufacturers to adapt to various production scales and crystal specifications while ensuring consistent ingot quality and yield.
 

SiC Ingot growth Furnace's data
 

Growth Theory

1. PVT (Physical Vapor Transport) Method – Growth Principle

In the PVT method, silicon carbide (SiC) crystals are grown through sublimation and condensation. At high temperatures (2000–2500°C), SiC powder sublimates (turns from solid to vapor) inside a vacuum or low-pressure environment. This SiC vapor is transported through a controlled temperature gradient and deposits onto a seed crystal, where it condenses and grows into a single crystal, known as a SiC Boule.
 

• Key Features:
  • Crystal growth by vapor phase transport.
     
  • Requires precise control of temperature gradient and pressure.
     
  • Used for producing bulk single crystal SiC Boules for wafer slicing

2. Resistance Heating – Growth Support Principle

In resistance heating, electrical current passes through a resistive heating element (e.g., graphite), generating heat that raises the temperature of the growth chamber and SiC source material. This heating method is used to maintain the high and stable temperatures needed for the PVT process.
 

• Key Features:
  • Indirect heating method: heat is transferred from the heater to the crucible.
  • Provides uniform and controlled heating.
  • Suitable for medium-scale production with stable energy consumption.

SiC Ingot growth Furnace's Photo
 

Our SiC sulotion result
 

At ZMSH, the SiC Boules produced using our advanced SiC Ingot Growth Furnace offer significant advantages in both crystal quality and process compatibility, ensuring they fully meet the stringent demands of modern semiconductor manufacturing.
 

Key Advantages:

• High Crystal Purity: Our SiC Boules are grown under tightly controlled conditions, achieving exceptional purity and minimal contamination, critical for high-performance semiconductor devices.
   

• Low Defect Density: With precise control of temperature, vacuum, and pressure during growth, our SiC Boules exhibit low dislocation densities and minimal micropipes, ensuring superior electrical properties and device yield.
   

• Uniform Crystal Structure: Consistent crystallinity across the entire boule, enabling efficient slicing and wafer fabrication with uniform thickness and material quality.
   

• Fully Compatible with Semiconductor Processes: Our SiC Boules are engineered to align with industry-standard wafering, polishing, and epitaxial growth processes, guaranteeing smooth integration into downstream device fabrication workflows.
   

• Scalable Production for 6-inch and 8-inch Wafers: Suitable for volume production of 6-inch and 8-inch SiC wafers, meeting the growing market demand for power electronics, EVs, and high-frequency applications.

Our survice
 

At ZMSH, we offer customizable services to meet the diverse needs of our clients in SiC Boule production. From equipment configuration to process support, we ensure that every solution aligns perfectly with your production goals and technical requirements.
 

What We Offer:

• Tailored Equipment Design: We customize the SiC Boule Growth Furnace specifications—including crystal size (6-inch, 8-inch, or custom), heating method (induction/resistance), and control systems—to fit your specific production needs.
   

• Process Parameter Customization: We help optimize temperature, pressure, and vacuum parameters based on your desired crystal quality, ensuring stable and efficient growth of SiC Boules.
   

• On-Site Installation & Commissioning: Our expert team provides on-site installation, calibration, and system integration to ensure your equipment operates at peak performance from day one.
   

• Customer Training: We offer comprehensive technical training for your staff, covering operation, maintenance, and troubleshooting of the furnace, to ensure confident and efficient use.
   

• After-Sales Support: ZMSH provides long-term after-sales service, including remote assistance, periodic maintenance, and fast response repair services to minimize downtime.