SiC Boule Growth Furnace PVT HTCVD And LPE Technologies For Single Crystal SiC

Product Specification

SiC Boule Growth Furnace PVT, HTCVD, and LPE Technologies for Single Crystal SiC Boule Production

SiC Boule Growth Furnace's Abstract

ZMSH proudly offers the SiC Boule Growth Furnace, an advanced solution engineered for the production of single crystal SiC Boules. Utilizing cutting-edge technologies such as PVT (Physical Vapor Transport), HTCVD (High Temperature Chemical Vapor Deposition), and LPE (Liquid Phase Epitaxy), our SiC Boule Growth Furnace is optimized for the stable and efficient growth of high-purity SiC Boules. This furnace supports the production of 6-inch, 8-inch, and customized-size SiC Boules, meeting the stringent demands of power electronics, EVs, and renewable energy systems.

SiC Boule Growth Furnace's Properties

• Multi-Technology Compatibility: The SiC Boule Growth Furnace supports PVT, HTCVD, and LPE processes, providing flexibility for different SiC crystal growth methods.
• Precise Temperature Control: Advanced resistance or induction heating ensures uniform temperature distribution, with control accuracy of ±1°C, essential for defect-free SiC Boule growth.
• Vacuum and Pressure Control: Integrated high-precision vacuum and pressure systems maintain optimal growth conditions, improving SiC Boule quality and yield.
• Crystal Size Support: Capable of growing 6-inch and 8-inch SiC Boules, with customization available for larger sizes.
• High Efficiency and Safety: The SiC Boule Growth Furnace is designed for energy efficiency, ease of operation, and safety, with features such as bottom loading and automatic control systems.
• Stable Crystal Growth Environment: Ensures consistent growth conditions, reducing defect density and enhancing the performance of final SiC wafers.
   

  Specification	Details
  Dimensions (L × W × H)	3200 × 1150 × 3600 mm
  Crucible Diameter	Ø 400 mm
  Ultimate Vacuum	5 × 10⁻⁴ Pa (after 1.5 h pumping)
  Rotation Shaft Diameter	Ø 200 mm
  Furnace Height	1250 mm
  Heating Method	Induction heating
  Max Temperature	2400°C
  Heating Power	Pmax = 40 kW, Frequency = 8–12 kHz
  Temperature Measurement	Dual-color infrared pyrometer
  Temperature Range	900–3000°C
  Temperature Accuracy	±1°C
  Pressure Range	1–700 mbar
  Pressure Control Accuracy	1–10 mbar: ±0.5% F.S; 10–100 mbar: ±0.5% F.S; 700 mbar: ±0.5% F.S
  Loading Mode	Bottom loading, safe and easy operation
  Optional Features	Shaft rotation, dual temperature zones

  
   

Three Types of SiC Boule Growth Furnace details

SiC Boule Growth Furnace's photo

SiC Boule from our Furnace

SiC Boule Growth Furnace’s Photo in Customers' Factory

Below is an installation of our SiC Boule Growth Furnace at a customer’s facility, demonstrating real-world application and reliable performance in mass production environments. Our global clients use the SiC Boule Growth Furnace for large-scale production of SiC wafers with outstanding consistency and quality.

Customizable Services for SiC Boule Growth Furnace

At ZMSH, we understand that each customer’s production needs are unique. That’s why we offer fully customizable solutions for our SiC Boule Growth Furnace, ensuring optimal compatibility with your production processes, technical requirements, and crystal growth goals.