Payment Terms | T/T |
Supply Ability | 100pcs/week |
Delivery Time | 2-4weeks |
Packaging Details | foamed plastic+carton |
Brand Name | ZMSH |
Model Number | MIOC Chip, Intensity Modulator Chip, Phase Modulator Chip |
Place of Origin | China |
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Product Specification
Payment Terms | T/T | Supply Ability | 100pcs/week |
Delivery Time | 2-4weeks | Packaging Details | foamed plastic+carton |
Brand Name | ZMSH | Model Number | MIOC Chip, Intensity Modulator Chip, Phase Modulator Chip |
Place of Origin | China | ||
High Light | Phase Modulator Chip ,MIOC Chip ,Intensity Modulator Chip |
MIOC Chip, Intensity Modulator Chip, Phase Modulator Chip
1.MIOC Chip
A Military-grade Integrated Optical Circuit (MIOC) chip is a high-performance optical component designed for precise control of light signals in fiber-optic systems. It is primarily used in fiber-optic gyroscopes (FOGs), optical communication systems, and high-precision sensing applications. The MIOC chip is typically fabricated using Lithium Niobate (LiNbO₃) or other advanced electro-optic materials, offering exceptional stability, low insertion loss, and high polarization-maintaining capabilities.
The MIOC chip integrates multiple optical components, including waveguides, couplers, and phase modulators, into a single compact substrate. It operates based on the electro-optic effect, where an externally applied voltage modifies the refractive index of the material, enabling precise control of light propagation. In fiber-optic gyroscopes, the MIOC chip serves as the core component that splits, modulates, and recombines light signals to detect rotational motion with extreme accuracy.
High Stability: Designed for extreme environmental conditions, with resistance to temperature fluctuations and mechanical vibrations.
Low Insertion Loss: Ensures minimal optical power loss, improving system efficiency.
Polarization-Maintaining Performance: Maintains signal integrity for high-precision applications.
Compact Integration: Reduces system complexity by integrating multiple optical functions into a single chip.
Fast Response Time: Enables real-time modulation with high-speed electro-optic response.
MIOC chips are widely used in FOGs for inertial navigation systems (INS) in aerospace, military, and autonomous vehicles. They ensure precise angular velocity measurements, enabling accurate positioning without reliance on GPS.
MIOC chips support high-speed optical signal processing, including phase modulation and amplitude control, making them essential in coherent optical communication systems.
The ultra-stable and precise phase modulation capabilities of MIOC chips make them valuable in quantum computing, quantum key distribution (QKD), and fiber-optic sensors used in industrial monitoring.
Advantages Over Other Optical Modulators
Higher Stability Compared to Discrete Components: Integrated design eliminates alignment issues and improves long-term reliability.
Superior Environmental Durability: Designed for harsh operating conditions in defense and aerospace applications.
Lower Power Consumption: Optimized for energy-efficient operation in embedded and mobile systems.
Specification
MIOC Chip | |||||
Type | Item | Value | |||
Y13 | S13 | ||||
Optical | Operation Wavelength | 1310±20 nm | 1310±20 nm | ||
Insertion Loss | ≤ 4.0 dB | ≤ 4.0 dB | |||
Splitting Ratio | 50 ± 3% | 50 ± 3% | |||
Return Loss | ≤ -45 dB | ≤ -45 dB | |||
Chip Polarization Extinction |
≤ -50 dB | ≤ -50 dB | |||
Input Optical Power | ≤ 100mW | ≤ 100mW | |||
Electrical | Vπ | ≤ 3.5 V | ≤ 4.0 V | ||
Bandwidth | ≥ 100 MHz | ||||
Electrode Structure | Push-Pull, Lumped-electrodes | ||||
Mechanical | Crystal | X-cut Y-prop LN | |||
Waveguide Process | Annealed Proton Exchange | ||||
Output port spacing | 400μm | ||||
Dimension Length×Width×Thickness |
20×3×1 mm3 | 12.5×3×1 mm3 |
2.Intensity Modulator Chip
An Intensity Modulator Chip is an advanced optical device designed to modulate the amplitude (intensity) of an optical signal in response to an external electrical input. These chips play a crucial role in fiber-optic communication, LiDAR, microwave photonics, and optical signal processing. By controlling the intensity of light, they enable high-speed data transmission, signal shaping, and advanced modulation formats required for modern photonic applications.
Typically, intensity modulators are based on Lithium Niobate (LiNbO₃), Silicon Photonics (SiPh), or Indium Phosphide (InP). The most common structure used in these chips is the Mach-Zehnder Interferometer (MZI), which allows precise modulation of light intensity.
The Intensity Modulator Chip operates by utilizing interference effects in a Mach-Zehnder Interferometer (MZI) waveguide. The optical signal is split into two paths, and the relative phase between them is adjusted using an externally applied electric field. When the two light paths recombine, constructive or destructive interference occurs, resulting in modulation of the optical intensity.
Key principles include:
Electro-optic effect: The refractive index of the material changes in response to an applied voltage, altering the phase of the light.
Interference control: By precisely controlling the phase shift, the modulator adjusts the intensity of the output signal.
High Extinction Ratio: Provides a strong contrast between high and low intensity levels, crucial for signal clarity.
Low Insertion Loss: Ensures minimal power loss during modulation.
High Modulation Bandwidth: Supports high-frequency signals, enabling data rates up to 100 Gbps and beyond.
Low Driving Voltage: Reduces power consumption for energy-efficient operation.
Compact and Integrated Design: Enables integration into photonic integrated circuits (PICs) for advanced optical systems.
Used in long-haul and metro optical fiber networks to encode digital data onto light signals.
Supports advanced modulation formats like NRZ, PAM4, and QAM for high-speed data transmission.
Used for pulse shaping and amplitude modulation in LiDAR systems, improving range resolution and detection accuracy.
Essential for autonomous vehicles, environmental monitoring, and 3D mapping.
Enables high-speed analog optical links for radar, satellite communications, and electronic warfare systems.
Used in RF-over-fiber transmission for wireless and defense applications.
Used in optical computing, ultrafast signal gating, and optical switching.
Facilitates optical pulse shaping, filtering, and waveform generation in research and industrial applications.
Higher Speed: Compared to electro-absorption modulators, intensity modulators offer superior speed and bandwidth.
Better Signal Quality: Higher extinction ratio ensures improved signal-to-noise performance.
More Robust to Temperature Variations: Materials like LiNbO₃ provide stable operation across a wide temperature range.
Specification
Intensity Modulator Chip | ||||||
Type | Item | Typical Value | Unit | |||
Optical | Crystal | X-cut Y-prop LN | - | |||
Waveguide Process | Annealed Proton Exchange | - | ||||
Operation Wavelength | 1550 nm ± 20 | nm | ||||
Insertion Loss | 4.5 | dB | ||||
Polarization Extinction | ≥ 20 | dB | ||||
DC Extinction Ratio | ≥ 20 | dB | ||||
Return Loss | ≤ -45 | dB | ||||
Electrical | RF Vπ | ≤ 3.5 | V | |||
Bias Vπ | ≤ 6.0 | V | ||||
RF Bandwidth | DC~300M | Hz | ||||
Electrode Structure | Push-Pull, Lumped-electrodes | |||||
RF port impedance | ~1M | Ω | ||||
Bias port impedance | ~1M | Ω | ||||
Mechanical | Dimension | Length×width×Thickness=52×3×1 mm3 |
3.Phase Modulator Chip
Abstract
A Phase Modulator Chip is a key optical device used to modulate the phase of an optical signal without altering its intensity. This modulation is crucial for applications in coherent optical communication, quantum optics, fiber-optic sensing, and microwave photonics. Unlike intensity modulators, which control the amplitude of light, phase modulators induce a controlled phase shift by leveraging the electro-optic effect in materials such as Lithium Niobate (LiNbO₃), Silicon Photonics (SiPh), and Indium Phosphide (InP).
By precisely tuning the phase of an optical wave, phase modulators enable coherent signal processing, high-speed data encoding, and precision measurement techniques in photonics-based systems.
A Phase Modulator Chip is typically based on an integrated waveguide structure that uses the electro-optic effect to modify the refractive index of the material. This leads to a change in the optical path length, resulting in a phase shift in the propagating light signal.
Key operating principles include:
Electro-optic effect: The application of an external voltage alters the refractive index of the waveguide, shifting the phase of the transmitted light.
Mach-Zehnder Interferometer (MZI) or Phase Shifter Design: The phase modulator can be implemented as a simple single-pass waveguide modulator or as part of an MZI structure for more complex modulation schemes.
Continuous and Discrete Phase Control: Depending on the application, the phase shift can be linear, nonlinear, or stepwise, allowing for advanced signal processing.
High-Speed Phase Modulation: Supports GHz-level modulation for high-speed communication and sensing.
Low Insertion Loss: Ensures minimal signal attenuation during phase modulation.
Wide Optical Bandwidth: Operates across a broad wavelength range, typically from C-band to L-band (1550 nm range) in telecom applications.
High Stability and Low Noise: Essential for precision applications such as fiber-optic gyroscopes and quantum communication.
Compact and Integrated Design: Enables integration into Photonic Integrated Circuits (PICs) for high-density optical systems.
Used in advanced modulation formats such as QPSK (Quadrature Phase Shift Keying), DPSK (Differential Phase Shift Keying), and 16QAM to encode data efficiently.
Enhances optical signal integrity for long-haul and data center interconnect networks.
Enables precise phase control for quantum key distribution (QKD), quantum entanglement, and quantum computing.
Essential in quantum state preparation and manipulation in photonic quantum circuits.
Used in interferometric fiber-optic sensors, such as fiber-optic gyroscopes (FOGs) and distributed acoustic sensors (DAS), for high-precision measurement of environmental changes.
Improves sensitivity in temperature, strain, and vibration sensing applications.
Used in RF photonic signal processing to generate and manipulate microwave signals in radar, satellite communication, and electronic warfare systems.
Enables phase-controlled beam steering in photonic-based phased array antennas.
Advantages Over Other Modulators
Preserves Signal Intensity: Unlike intensity modulators, phase modulators do not reduce the power of the transmitted signal.
Higher Spectral Efficiency: Enables advanced coherent modulation formats for efficient data transmission.
More Robust to Environmental Variations: Offers higher stability and precision than purely electronic phase shifters.
Specification
Type | Item | Typical Value | Unit | |||
Optical | Crystal | X-cut Y-prop LN | - | |||
Waveguide Process | Annealed Proton Exchange | - | ||||
Operation Wavelength | 1550 nm ± 20 | nm | ||||
Insertion Loss | 4.0 | dB | ||||
Polarization Extinction | ≥ 20 | dB | ||||
Return Loss | ≤ -45 | dB | ||||
Electrical | Vπ | ≤ 3.5 | V | |||
Bandwidth | DC~300M | Hz | ||||
Electrode Structure | Lumped-electrodes | |||||
RF port impedance | ~1M | Ω | ||||
Mechanical | Dimension | Length×width×Thickness=40×3×1 mm3 |
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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