China factories

China factory - SHANGHAI FAMOUS TRADE CO.,LTD

SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
  • Verified Supplier

Leave a Message

we will call you back quickly!

Submit Requirement
China MIOC Intensity Modulator Chip , Phase Modulator Chip
China MIOC Intensity Modulator Chip , Phase Modulator Chip

  1. China MIOC Intensity Modulator Chip , Phase Modulator Chip
  2. China MIOC Intensity Modulator Chip , Phase Modulator Chip
  3. China MIOC Intensity Modulator Chip , Phase Modulator Chip

MIOC Intensity Modulator Chip , Phase Modulator Chip

  1. MOQ: 5
  2. Price: Undetermined
  3. Get Latest Price
Payment Terms T/T
Supply Ability 100pcs/week
Delivery Time 2-4weeks
Packaging Details foamed plastic+carton
Brand Name ZMSH
Model Number MIOC Chip, Intensity Modulator Chip, Phase Modulator Chip
Place of Origin China

View Detail Information

Contact Now Ask for best deal
Get Latest Price Request a quote
  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 100pcs/week
Delivery Time 2-4weeks Packaging Details foamed plastic+carton
Brand Name ZMSH Model Number MIOC Chip, Intensity Modulator Chip, Phase Modulator Chip
Place of Origin China
High Light Phase Modulator ChipMIOC ChipIntensity Modulator Chip

MIOC Chip, Intensity Modulator Chip, Phase Modulator Chip

 

 

1.MIOC Chip

 

Abstract

 

A Military-grade Integrated Optical Circuit (MIOC) chip is a high-performance optical component designed for precise control of light signals in fiber-optic systems. It is primarily used in fiber-optic gyroscopes (FOGs), optical communication systems, and high-precision sensing applications. The MIOC chip is typically fabricated using Lithium Niobate (LiNbO₃) or other advanced electro-optic materials, offering exceptional stability, low insertion loss, and high polarization-maintaining capabilities.

 

Structure and Working Principle

 

The MIOC chip integrates multiple optical components, including waveguides, couplers, and phase modulators, into a single compact substrate. It operates based on the electro-optic effect, where an externally applied voltage modifies the refractive index of the material, enabling precise control of light propagation. In fiber-optic gyroscopes, the MIOC chip serves as the core component that splits, modulates, and recombines light signals to detect rotational motion with extreme accuracy.

 

Key Features

 

High Stability: Designed for extreme environmental conditions, with resistance to temperature fluctuations and mechanical vibrations.

 

Low Insertion Loss: Ensures minimal optical power loss, improving system efficiency.

Polarization-Maintaining Performance: Maintains signal integrity for high-precision applications.

 

Compact Integration: Reduces system complexity by integrating multiple optical functions into a single chip.

 

Fast Response Time: Enables real-time modulation with high-speed electro-optic response.

 

Applications

 

1) Fiber-Optic Gyroscopes (FOGs)

MIOC chips are widely used in FOGs for inertial navigation systems (INS) in aerospace, military, and autonomous vehicles. They ensure precise angular velocity measurements, enabling accurate positioning without reliance on GPS.

 

2) Optical Communication

MIOC chips support high-speed optical signal processing, including phase modulation and amplitude control, making them essential in coherent optical communication systems.

 

3) Quantum Optics and Photonic Sensing

The ultra-stable and precise phase modulation capabilities of MIOC chips make them valuable in quantum computing, quantum key distribution (QKD), and fiber-optic sensors used in industrial monitoring.

 

 

Advantages Over Other Optical Modulators

 

Higher Stability Compared to Discrete Components: Integrated design eliminates alignment issues and improves long-term reliability.

 

Superior Environmental Durability: Designed for harsh operating conditions in defense and aerospace applications.

 

Lower Power Consumption: Optimized for energy-efficient operation in embedded and mobile systems.

 

 

Specification

 

MIOC Chip
Type Item Value
Y13 S13
Optical Operation Wavelength 1310±20 nm 1310±20 nm
Insertion Loss ≤ 4.0 dB ≤ 4.0 dB
Splitting Ratio 50 ± 3% 50 ± 3%
Return Loss ≤ -45 dB ≤ -45 dB
Chip Polarization
Extinction
≤ -50 dB ≤ -50 dB
Input Optical Power ≤ 100mW ≤ 100mW
Electrical ≤ 3.5 V ≤ 4.0 V
Bandwidth ≥ 100 MHz
Electrode Structure Push-Pull, Lumped-electrodes
Mechanical Crystal X-cut Y-prop LN
Waveguide Process Annealed Proton Exchange
Output port spacing 400μm
Dimension

Length×Width×Thickness
20×3×1 mm3 12.5×3×1 mm3

 

 

2.Intensity Modulator Chip

 

Abstract

 

An Intensity Modulator Chip is an advanced optical device designed to modulate the amplitude (intensity) of an optical signal in response to an external electrical input. These chips play a crucial role in fiber-optic communication, LiDAR, microwave photonics, and optical signal processing. By controlling the intensity of light, they enable high-speed data transmission, signal shaping, and advanced modulation formats required for modern photonic applications.

 

Typically, intensity modulators are based on Lithium Niobate (LiNbO₃), Silicon Photonics (SiPh), or Indium Phosphide (InP). The most common structure used in these chips is the Mach-Zehnder Interferometer (MZI), which allows precise modulation of light intensity.

 

Structure and Working Principle

 

The Intensity Modulator Chip operates by utilizing interference effects in a Mach-Zehnder Interferometer (MZI) waveguide. The optical signal is split into two paths, and the relative phase between them is adjusted using an externally applied electric field. When the two light paths recombine, constructive or destructive interference occurs, resulting in modulation of the optical intensity.

 

Key principles include:

 

Electro-optic effect: The refractive index of the material changes in response to an applied voltage, altering the phase of the light.

 

Interference control: By precisely controlling the phase shift, the modulator adjusts the intensity of the output signal.

 

Key Features

 

High Extinction Ratio: Provides a strong contrast between high and low intensity levels, crucial for signal clarity.

 

Low Insertion Loss: Ensures minimal power loss during modulation.

 

High Modulation Bandwidth: Supports high-frequency signals, enabling data rates up to 100 Gbps and beyond.

 

Low Driving Voltage: Reduces power consumption for energy-efficient operation.

 

Compact and Integrated Design: Enables integration into photonic integrated circuits (PICs) for advanced optical systems.

 

Applications

 

1) Optical Communication

 

Used in long-haul and metro optical fiber networks to encode digital data onto light signals.

 

Supports advanced modulation formats like NRZ, PAM4, and QAM for high-speed data transmission.

 

2) LiDAR (Light Detection and Ranging)

 

Used for pulse shaping and amplitude modulation in LiDAR systems, improving range resolution and detection accuracy.

 

Essential for autonomous vehicles, environmental monitoring, and 3D mapping.

 

3) Microwave Photonics

 

Enables high-speed analog optical links for radar, satellite communications, and electronic warfare systems.

 

Used in RF-over-fiber transmission for wireless and defense applications.

 

4) Optical Signal Processing

 

Used in optical computing, ultrafast signal gating, and optical switching.

 

Facilitates optical pulse shaping, filtering, and waveform generation in research and industrial applications.

 

Advantages Over Other Optical Modulators

 

Higher Speed: Compared to electro-absorption modulators, intensity modulators offer superior speed and bandwidth.

 

Better Signal Quality: Higher extinction ratio ensures improved signal-to-noise performance.

 

More Robust to Temperature Variations: Materials like LiNbO₃ provide stable operation across a wide temperature range.

 

 

Specification

 

 

Intensity Modulator Chip
Type Item Typical Value Unit
Optical Crystal X-cut Y-prop LN -
Waveguide Process Annealed Proton Exchange -
Operation Wavelength 1550 nm ± 20 nm
Insertion Loss 4.5 dB
Polarization Extinction ≥ 20 dB
DC Extinction Ratio ≥ 20 dB
Return Loss ≤ -45 dB
Electrical RF Vπ ≤ 3.5 V
Bias Vπ ≤ 6.0 V
RF Bandwidth DC~300M Hz
Electrode Structure Push-Pull, Lumped-electrodes  
RF port impedance ~1M Ω
Bias port impedance ~1M Ω
Mechanical Dimension Length×width×Thickness=52×3×1 mm3  

 

 

3.Phase Modulator Chip

 

Abstract

 

A Phase Modulator Chip is a key optical device used to modulate the phase of an optical signal without altering its intensity. This modulation is crucial for applications in coherent optical communication, quantum optics, fiber-optic sensing, and microwave photonics. Unlike intensity modulators, which control the amplitude of light, phase modulators induce a controlled phase shift by leveraging the electro-optic effect in materials such as Lithium Niobate (LiNbO₃), Silicon Photonics (SiPh), and Indium Phosphide (InP).

 

By precisely tuning the phase of an optical wave, phase modulators enable coherent signal processing, high-speed data encoding, and precision measurement techniques in photonics-based systems.

 

Structure and Working Principle

 

A Phase Modulator Chip is typically based on an integrated waveguide structure that uses the electro-optic effect to modify the refractive index of the material. This leads to a change in the optical path length, resulting in a phase shift in the propagating light signal.

Key operating principles include:

 

Electro-optic effect: The application of an external voltage alters the refractive index of the waveguide, shifting the phase of the transmitted light.

 

Mach-Zehnder Interferometer (MZI) or Phase Shifter Design: The phase modulator can be implemented as a simple single-pass waveguide modulator or as part of an MZI structure for more complex modulation schemes.

 

Continuous and Discrete Phase Control: Depending on the application, the phase shift can be linear, nonlinear, or stepwise, allowing for advanced signal processing.

 

Key Features

 

High-Speed Phase Modulation: Supports GHz-level modulation for high-speed communication and sensing.

 

Low Insertion Loss: Ensures minimal signal attenuation during phase modulation.

 

Wide Optical Bandwidth: Operates across a broad wavelength range, typically from C-band to L-band (1550 nm range) in telecom applications.

 

High Stability and Low Noise: Essential for precision applications such as fiber-optic gyroscopes and quantum communication.

 

Compact and Integrated Design: Enables integration into Photonic Integrated Circuits (PICs) for high-density optical systems.

 

Applications

 

1) Coherent Optical Communication

 

Used in advanced modulation formats such as QPSK (Quadrature Phase Shift Keying), DPSK (Differential Phase Shift Keying), and 16QAM to encode data efficiently.

 

Enhances optical signal integrity for long-haul and data center interconnect networks.

 

2) Quantum Optics and Quantum Communication

 

Enables precise phase control for quantum key distribution (QKD), quantum entanglement, and quantum computing.

 

Essential in quantum state preparation and manipulation in photonic quantum circuits.

 

3) Fiber-Optic Sensors

 

Used in interferometric fiber-optic sensors, such as fiber-optic gyroscopes (FOGs) and distributed acoustic sensors (DAS), for high-precision measurement of environmental changes.

 

Improves sensitivity in temperature, strain, and vibration sensing applications.

 

4) Microwave Photonics and RF Signal Processing

 

Used in RF photonic signal processing to generate and manipulate microwave signals in radar, satellite communication, and electronic warfare systems.

 

Enables phase-controlled beam steering in photonic-based phased array antennas.

 

 

 Advantages Over Other Modulators

 

Preserves Signal Intensity: Unlike intensity modulators, phase modulators do not reduce the power of the transmitted signal.

 

Higher Spectral Efficiency: Enables advanced coherent modulation formats for efficient data transmission.

 

More Robust to Environmental Variations: Offers higher stability and precision than purely electronic phase shifters.

 

 

Specification

 

 

Type Item Typical Value Unit
Optical Crystal X-cut Y-prop LN -
Waveguide Process Annealed Proton Exchange -
Operation Wavelength 1550 nm ± 20 nm
Insertion Loss 4.0 dB
Polarization Extinction ≥ 20 dB
Return Loss ≤ -45 dB
Electrical ≤ 3.5 V
Bandwidth DC~300M Hz
Electrode Structure Lumped-electrodes  
RF port impedance ~1M Ω
Mechanical Dimension Length×width×Thickness=40×3×1 mm3  

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...

+ Read More

Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Rm5-616,NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
  • https://www.sapphire-substrate.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement