Payment Terms | T/T, Western Union, MoneyGram |
Supply Ability | 1-50pcs/month |
Delivery Time | 1-6weeks |
Packaging Details | single wafer package in 100-grade cleaning room |
Material | SiC single crystal 4h-N |
Grade | Production grade |
Thicnkss | 1.0mm |
Suraface | polished |
Application | seed crystal for crystal growth |
Diameter | 4inch/6inch |
color | Green |
MPD | <2cm-2 |
Brand Name | ZMKJ |
Model Number | CUSTOMIZED SIZE |
Place of Origin | CHINA |
View Detail Information
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Product Specification
Payment Terms | T/T, Western Union, MoneyGram | Supply Ability | 1-50pcs/month |
Delivery Time | 1-6weeks | Packaging Details | single wafer package in 100-grade cleaning room |
Material | SiC single crystal 4h-N | Grade | Production grade |
Thicnkss | 1.0mm | Suraface | polished |
Application | seed crystal for crystal growth | Diameter | 4inch/6inch |
color | Green | MPD | <2cm-2 |
Brand Name | ZMKJ | Model Number | CUSTOMIZED SIZE |
Place of Origin | CHINA | ||
High Light | ingot growth Silicon Carbide Wafer ,100mm Silicon Carbide Wafer ,polished sic epitaxial wafer |
4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth
Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut sic wafersProduction 4inch grade 4H-N 1.5mm SIC Wafers for seed crystal
About Silicon Carbide (SiC)Crystal
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
Stacking Sequence | ABCB | ABCACB |
Mohs Hardness | ≈9.2 | ≈9.2 |
Density | 3.21 g/cm3 | 3.21 g/cm3 |
Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
Refraction Index @750nm | no = 2.61 | no = 2.60 |
Dielectric Constant | c~9.66 | c~9.66 |
Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K | |
Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
Band-gap | 3.23 eV | 3.02 eV |
Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
2inch diameter Silicon Carbide (SiC) Substrate Specification | ||||||||||
Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade | ||||||
Diameter | 100. mm±0.2mm | |||||||||
Thickness | 1000±25um Or other customized thickness | |||||||||
Wafer Orientation | Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI | |||||||||
Micropipe Density | ≤0 cm-2 | ≤2 cm-2 | ≤5cm-2 | ≤30 cm-2 | ||||||
Resistivity | 4H-N | 0.015~0.028 Ω•cm | ||||||||
4/6H-SI | ≥1E7 Ω·cm | |||||||||
Primary Flat | {10-10}±5.0° or round shape | |||||||||
Primary Flat Length | 18.5 mm±2.0 mm or round shape | |||||||||
Secondary Flat Length | 10.0mm±2.0 mm | |||||||||
Secondary Flat Orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | |||||||||
Edge exclusion | 1 mm | |||||||||
TTV/Bow /Warp | ≤10μm /≤10μm /≤15μm | |||||||||
Roughness | Polish Ra≤1 nm | |||||||||
CMP Ra≤0.5 nm | ||||||||||
Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |||||||
Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |||||||
Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |||||||
Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | |||||||
edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |||||||
Production display show
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
SiC Applications
Application areas
>Packaging – Logistcs
we concerns each details of the package , cleaning, anti-static , shock treatment .
According to the quantity and shape of the product , we will take a different packaging process! Almost by single wafer cassettes or 25pcs cassette in 100 grade cleaning room.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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