Payment Terms | T/T, Western Union, paypal |
Supply Ability | 50pcs/month |
Delivery Time | in 30days |
Packaging Details | single wafer container in cleaning room |
substrate | sapphire wafer |
layer | AlN template |
layer thickness | 1-5um |
conductivity type | N/P |
Orientation | 0001 |
application | high power/high frequency electronic devices |
application 2 | 5G saw/BAW Devices |
silicon thickness | 525um/625um/725um |
Brand Name | ZMKJ |
Model Number | 2inch AlN-sapphire |
Place of Origin | China |
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Product Specification
Payment Terms | T/T, Western Union, paypal | Supply Ability | 50pcs/month |
Delivery Time | in 30days | Packaging Details | single wafer container in cleaning room |
substrate | sapphire wafer | layer | AlN template |
layer thickness | 1-5um | conductivity type | N/P |
Orientation | 0001 | application | high power/high frequency electronic devices |
application 2 | 5G saw/BAW Devices | silicon thickness | 525um/625um/725um |
Brand Name | ZMKJ | Model Number | 2inch AlN-sapphire |
Place of Origin | China | ||
High Light | 2 inch AlN Template ,5G BAW Devices AlN Template ,2 inch sapphire substrate |
2inch 4iinch 6Inch Sapphire based AlN templates AlN film on sapphire substrate
2inch on sapphire substrate AlN Template layer Wafer For 5G BAW Devices
Other relaterd 4INCH GaN Template Specification
GaN/ Al₂O₃ Substrates (4") 4inch | |||
Item | Un-doped | N-type | High-doped N-type |
Size (mm) | Φ100.0±0.5 (4") | ||
Substrate Structure | GaN on Sapphire(0001) | ||
SurfaceFinished | (Standard: SSP Option: DSP) | ||
Thickness (μm) | 4.5±0.5; 20±2;Customized | ||
Conduction Type | Un-doped | N-type | High-doped N-type |
Resistivity (Ω·cm)(300K) | ≤0.5 | ≤0.05 | ≤0.01 |
GaN Thickness Uniformity | ≤±10% (4") | ||
Dislocation Density (cm-2) | ≤5×108 | ||
Useable Surface Area | >90% | ||
Package | Packaged in a class 100 clean room environment. |
Crystal structure | Wurtzite |
Lattice constant (Å) | a=3.112, c=4.982 |
Conduction band type | Direct bandgap |
Density (g/cm3) | 3.23 |
Surface microhardness (Knoop test) | 800 |
Melting point (℃) | 2750 (10-100 bar in N2) |
Thermal conductivity (W/m·K) | 320 |
Band gap energy (eV) | 6.28 |
Electron mobility (V·s/cm2) | 1100 |
Electric breakdown field (MV/cm) | 11.7 |
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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