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SHANGHAI FAMOUS TRADE CO.,LTD

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China 4" Sapphire Based GaN Templates Semiconductor Substrate
China 4" Sapphire Based GaN Templates Semiconductor Substrate

  1. China 4" Sapphire Based GaN Templates Semiconductor Substrate
  2. China 4" Sapphire Based GaN Templates Semiconductor Substrate
  3. China 4" Sapphire Based GaN Templates Semiconductor Substrate
  4. China 4" Sapphire Based GaN Templates Semiconductor Substrate

4" Sapphire Based GaN Templates Semiconductor Substrate

  1. MOQ: 5pcs
  2. Price: By case
  3. Get Latest Price
Payment Terms T/T, Western Union, paypal
Supply Ability 50pcs/month
Delivery Time in 30days
Packaging Details single wafer container in cleaning room
substrate sapphire wafer
layer GaN template
layer thickness 1-5um
conductivity type N/P
Orientation 0001
application high power/high frequency electronic devices
application 2 5G saw/BAW Devices
silicon thickness 525um/625um/725um
Brand Name ZMKJ
Model Number 4inch GaN-sapphire
Place of Origin China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union, paypal Supply Ability 50pcs/month
Delivery Time in 30days Packaging Details single wafer container in cleaning room
substrate sapphire wafer layer GaN template
layer thickness 1-5um conductivity type N/P
Orientation 0001 application high power/high frequency electronic devices
application 2 5G saw/BAW Devices silicon thickness 525um/625um/725um
Brand Name ZMKJ Model Number 4inch GaN-sapphire
Place of Origin China
High Light 5G saw gan templates4" gan templatesGaN semiconductor Substrate

2inch 4inch 4" Sapphire based GaN templates GaN film on sapphire substrate

 

Properties of GaN

 

Chemical properties of GaN

1) At room temperature, GaN is insoluble in water, acid and alkali.

2)Dissolved in a hot alkaline solution at a very slow rate.

3) NaOH, H2SO4 and H3PO4 can quickly corrode the poor quality of GaN, can be used for these poor quality GaN crystal defect detection.

4) GaN in the HCL or hydrogen, at high temperature presents unstable characteristics.

5) GaN is the most stable under nitrogen.

Electrical properties of GaN

1) The electrical properties of GaN are the most important factors affecting the device.

2) The GaN with no doping was n in all the cases, and the electron concentration of the best sample was about 4*(10^16)/c㎡.

3) Generally, the prepared P samples are highly compensated.

Optical properties of GaN

1) Wide band gap compound semiconductor material with high band width (2.3~6.2eV), can cover the red yellow green, blue, violet and ultraviolet spectrum, so far is that any other semiconductor materials are unable to achieve.

2) Mainly used in blue and violet light emitting device.

Properties of GaN Material

1) High frequency property, arrive at 300G Hz. (Si is 10G & GaAs is 80G)

2) High temperature property, Normal work at 300℃, very suitable for aerospace, military and other high temperature environment.

3) The electron drift has high saturation velocity, low dielectric constant and good thermal conductivity.

4) Acid and alkali resistance, corrosion resistance, can be used in harsh environment.

5) High voltage characteristics, impact resistance, high reliability.

6) Large power, the communication equipment is very eager.

 
Application of GaN

Main usage of GaN:

1) light emitting diodes, LED

2) field effect transistors, FET

3) laser diodes, LD

 
                             Specification 
 
Caracteristic Specification

 

Other relaterd  4INCH  GaN Template Specification 

 

  GaN/ Al₂O₃ Substrates (4") 4inch 
Item  Un-doped N-type

High-doped

N-type

Size  (mm) Φ100.0±0.5 (4")
Substrate Structure GaN on Sapphire(0001)
SurfaceFinished  (Standard: SSP Option: DSP)
Thickness (μm) 4.5±0.5; 20±2;Customized
Conduction Type  Un-doped N-type High-doped N-type
Resistivity  (Ω·cm)(300K) ≤0.5 ≤0.05 ≤0.01
GaN Thickness Uniformity
 
≤±10% (4")
Dislocation Density (cm-2)
 
≤5×108
Useable Surface Area >90%
Package  Packaged in a class 100 clean room environment.
 

Crystal structure

Wurtzite

Lattice constant (Å) a=3.112, c=4.982
Conduction band type Direct bandgap
Density (g/cm3) 3.23
Surface microhardness (Knoop test) 800
Melting point (℃) 2750 (10-100 bar in N2)
Thermal conductivity (W/m·K) 320
Band gap energy (eV) 6.28
Electron mobility (V·s/cm2) 1100
Electric breakdown field (MV/cm) 11.7

Company Details

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 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Rm5-616,NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
  • https://www.sapphire-substrate.com/

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