Payment Terms | T/T, Western Union |
Supply Ability | 500pcs |
Delivery Time | 2-4weeks |
Packaging Details | single wafer package in 1000-grade cleaning room |
Material | InP |
growth method | vFG |
SIZE | 2~ 4 INCH |
Thickness | 350-650um |
application | III-V direct bandgap semiconductor material |
surface | ssp/dsp |
package | single wafer box |
Brand Name | zmkj |
Model Number | InP |
Place of Origin | CHINA |
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Product Specification
Payment Terms | T/T, Western Union | Supply Ability | 500pcs |
Delivery Time | 2-4weeks | Packaging Details | single wafer package in 1000-grade cleaning room |
Material | InP | growth method | vFG |
SIZE | 2~ 4 INCH | Thickness | 350-650um |
application | III-V direct bandgap semiconductor material | surface | ssp/dsp |
package | single wafer box | Brand Name | zmkj |
Model Number | InP | Place of Origin | CHINA |
High Light | Single Crystal Indium Phosphide Wafers ,650um Indium Phosphide Wafers ,InP Semiconductor Substrate Wafers |
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer 2 inch/3 inch/4 inch 350-650 um InP Crystal Wafer Dummy Prime Semiconductor Substrate
size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized |
Ra | Surface roughness(Ra):<=5A |
Polish | Single or doubles side polished |
Package | 100 single or doubles side polished |
It has the advantages of high electronic limit drift speed, good radiation resistance, and good heat conduction. Suitable for
manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.
Wafer Diameter(mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 |
Thickness(um) | 350±25 | 625±25 | 625±25 |
TTV-P/P(um) | ≤10 | ≤10 | ≤10 |
TTv-P/E(um) | ≤10 | ≤15 | ≤15 |
WARP(um) | ≤15 | ≤15 | ≤15 |
OF(mm) | 17±1 | 22±1 | 32.5±1 |
OF/IF(mm) | 7±1 | 12±1 | 18±11 |
Description | Application | Wavelength Range |
InP Based Epi-wafer | FP laser | ~1310nm; ~1550nm;~1900nm |
DFB laser | 1270nm~1630nm | |
Avalanche photo-detector | 1250nm~1600nm | |
Photo-detector | 1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1.4μm (InGaAsP absorptive layer) |
Product Name |
High Purity Indium Phosphide Polycrystalline Substrate Sheet |
Iron Doped Indium Phosphide Crystal |
N-type and P-type Indium Phosphide Crystal |
4 Inch Indium Phosphide Single Crystal Ingot |
Indium Phosphide Based Epitaxial Wafer |
Indium Phosphide Semiconductor Crystal Substrate |
Indium Phosphide Single Crystal Substrate |
Indium Antimonide Single Crystal Substrate |
Indium Arsenic Single Crystal Substrate |
---FAQ –
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock, it is according to quantity.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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