Payment Terms | T/T, Western Union, MoneyGram |
Supply Ability | 1000pcs per month |
Delivery Time | 1 weeks |
Packaging Details | in 25pcs cassette wafer box under 100grade cleaning room |
material | sapphire single crystal Al2O3 99.999% |
orientation | C-AXIS/A-AXIS/M-AXIS/M-AXIS |
surface | SSP DSP or Grinding |
thickness | 0.25mm, 0.5mm or 0.43mm |
application | led or optical glass |
growth method | ky |
SIZE | 4inch DIA100mm |
Package | 25/Cassette |
Brand Name | ZMSH |
Model Number | 4INCH*0.5mmt |
Certification | ROHS |
Place of Origin | China |
View Detail Information
Explore similar products
2'' Sapphire Substrate 10-12 R - Plane 11-20 A - Plane Thickness 430um
Dsp SSP M - Axis Sapphire Windows , Sapphire Wafer 10-10 10-12 2 Inch
Round Sapphire Substrate Wafers 2 Inch 50.8mm Thickness 100um/0.1mm Dsp
2 3 4 Inch Sapphire Wafers For Optical Thickness 400um Dsp Zero Degree
Product Specification
Payment Terms | T/T, Western Union, MoneyGram | Supply Ability | 1000pcs per month |
Delivery Time | 1 weeks | Packaging Details | in 25pcs cassette wafer box under 100grade cleaning room |
material | sapphire single crystal Al2O3 99.999% | orientation | C-AXIS/A-AXIS/M-AXIS/M-AXIS |
surface | SSP DSP or Grinding | thickness | 0.25mm, 0.5mm or 0.43mm |
application | led or optical glass | growth method | ky |
SIZE | 4inch DIA100mm | Package | 25/Cassette |
Brand Name | ZMSH | Model Number | 4INCH*0.5mmt |
Certification | ROHS | Place of Origin | China |
High Light | High Hardness 4Inch Sapphire Substrate ,Leds Laser Diodes Sapphire Wafer ,Optoelectronics Sapphire Wafer |
4inch 101.6mm Sapphire Wafer Substrate Carrier Single Side Polished Single Crystal Al2O3
4-inch sapphire wafer is widely used in LED, laser diode, optoelectronic devices, semiconductor devices, and other fields. The high light transmittance and high hardness of sapphire wafers make them ideal substrate materials for manufacturing high-brightness and high-power LEDs. In addition, sapphire wafers can also be used to manufacture optical Windows, mechanical components, and so on.
Physical | |
Chemical formula | Al2O3 |
Density | 3.97 g/cm3 |
Hardness | 9 Mohs |
Melting point | 2050oC |
Max. use temperature | 1800-1900oC |
Mechanical | |
Tensile strength | 250-400 MPa |
Compressive strength | 2000 MPa |
Poisson's ratio | 0.25-0.30 |
Young's Modulus | 350-400 GPa |
Bending strength | 450-860 MPa |
Rapture Modulus | 350-690 MPa |
Thermal | |
Linear expansion rate (at 293-323 K) | 5.0*10-6K-1(⊥ C) |
6.6*10-6K-1(∥ C) | |
Thermal conductivity (at 298 K) | 30.3 W/(m*K)(⊥ C) |
32.5 W/(m*K)(∥ C) | |
Specific heat (at 298 K) | 0.10 cal*g-1 |
Electrical | |
Resistivity (at 298 K) | 5.0*1018 Ω*cm(⊥ C) |
1.3-2.9*1019 Ω*cm(∥ C) | |
Dielectric constant (at 298 K, in 103-109 Hz interval) | 9.3 (⊥ C) |
11.5 (∥ C) |
The production process for sapphire wafers usually includes the following steps:
Sapphire single crystal material with high purity is selected.
Cut sapphire single crystal material into crystals of appropriate size.
The crystal is processed into wafer shape by high temperature and pressure.
Precision grinding and polishing is performed many times to obtain high quality surface finish and flatness
Specs | 2 inch | 4 inch | 6 inch | 8inch |
Dia | 50.8 ± 0.1 mm | 100 ± 0.1 mm | 150 ± 0.1 mm | 200 ± 0.1 mm |
Thick | 430 ± 25 um | 650 ± 25 um | 1300 ± 25 um | 1300 ± 25 um |
Ra | Ra ≤ 0.3 nm | Ra ≤ 0.3nm | Ra ≤ 0.3nm | Ra ≤ 0.3 nm |
TTV | ≤ 10um | ≤ 10um | ≤ 10um | ≤ 10um |
Tolerance | ≤ 3 um | ≤ 3 um | ≤ 3 um | ≤ 3 um |
Quality surface | 20/10 | 20/10 | 20/10 | 20/10 |
Surface state | DSP SSP Grinding | |||
Shape | Circle with notch or flatness | |||
Chamfer | 45°,C Shape | |||
Material | Al2O3 99.999% | |||
N/O | Sapphire wafer |
The material is grown and orientated, and substrates are fabricated and polished to an extremely smooth damage free Epi-Ready surface on one or both sides of the wafer. A variety of wafer orientations and sizes up to 6" in diameter are available.
A-Plane sapphire substrates - are usually used for hybrid microelectronic applications requiring a uniform dielectric constant and highly insulating characteristics.
C-Plane substrates - tend to be used for all-V and ll-Vl compounds, such as GaN, for bright blue and green LED and laser diodes.
R-Plane substrates - these are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications.
Standard wafer 2 inch C-plane sapphire wafer SSP/DSP 3 inch C-plane sapphire wafer SSP/DSP 4 inch C-plane sapphire wafer SSP/DSP 6 inch C-plane sapphire wafer SSP/DSP | Special Cut A-plane (1120) sapphire wafer R-plane (1102) sapphire wafer M-plane (1010) sapphire wafer N-plane (1123) sapphire wafer C-axis with a 0.5°~ 4° offcut, toward A-axis or M-axis Other customized orientation |
Customized Size 10*10mm sapphire wafer 20*20mm sapphire wafer Ultra thin (100um) sapphire wafer 8 inch sapphire wafer | Patterned Sapphire Substrate (PSS) 2 inch C-plane PSS 4 inch C-plane PSS |
2inch | DSP C-AXIS 0.1mm/0.175mm/0.2mm/0.3mm/0.4mm /0.5mm/ 1.0mmt SSP C-axis 0.2/0.43mm (DSP&SSP) A-axis/M-axis/R-axis 0.43mm
|
3inch |
DSP/ SSP C-axis 0.43mm/0.5mm
|
4Inch |
dsp c-axis 0.4mm/ 0.5mm/1.0mm ssp c-axis 0.5mm/0.65mm/1.0mmt
|
6inch | ssp c-axis 1.0mm/1.3mmm
dsp c-axis 0.65mm/ 0.8mm/1.0mmt
|
Similar products:
In addition to 4-inch sapphire wafers, there are other sizes and shapes of sapphire wafers to choose from, such as 2-inch, 3-inch, 6-inch or even larger sapphire wafers. In addition, there are other materials that can be used to manufacture leds and semiconductor devices, such as aluminum nitride (AlN) and silicon carbide (SiC).
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification:
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
Get in touch with us
Leave a Message, we will call you back quickly!