SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T, Western Union, MoneyGram |
| Supply Ability | 1-50pcs/month |
| Delivery Time | 3-6weeks |
| Packaging Details | single wafer package in 100-grade cleaning room |
| Material | Monocrystalline Silicon Carbide |
| hardness | 9.4 |
| Application | MOS and SBD |
| tolerance | ±0.1mm |
| type | 4h-n 4h-semi 6h-semi |
| diameter | 150-160mm |
| thickness | 0.1-15mm |
| resistivity | 0.015~0 028 O-cm |
| Brand Name | ZMKJ |
| Model Number | 6Inch SiC substrate dummy |
| Certification | ROHS |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T, Western Union, MoneyGram | Supply Ability | 1-50pcs/month |
| Delivery Time | 3-6weeks | Packaging Details | single wafer package in 100-grade cleaning room |
| Material | Monocrystalline Silicon Carbide | hardness | 9.4 |
| Application | MOS and SBD | tolerance | ±0.1mm |
| type | 4h-n 4h-semi 6h-semi | diameter | 150-160mm |
| thickness | 0.1-15mm | resistivity | 0.015~0 028 O-cm |
| Brand Name | ZMKJ | Model Number | 6Inch SiC substrate dummy |
| Certification | ROHS | Place of Origin | CHINA |
| High Light | Monocrystalline SiC Silicon Carbide Wafer ，Dummy Grade Silicon Carbide Wafer ，Monocrystalline SiC Wafer | ||
6Inch Dia153mm 156mm 159mm Monocrystalline SiC Silicon Carbide Wafer Substrate Dummy Grade
Silicon carbide substrate can be divided into conductive type and semi-insulating type according to resistivity. Conductive silicon carbide devices are mainly used in electric vehicles, photovoltaic power generation, rail transit, data centers, charging and other infrastructure. The electric vehicle industry has a huge demand for conductive silicon carbide substrates, and at present, Tesla, BYD, NIO, Xiaopeng and other new energy vehicle companies have planned to use silicon carbide discrete devices or modules.
Semi-insulated silicon carbide devices are mainly used in 5G communications, vehicle communications, national defense applications, data transmission, aerospace and other fields. By growing the gallium nitride epitaxial layer on the semi-insulated silicon carbide substrate, the silicon-based gallium nitride epitaxial wafer can be further made into microwave RF devices, which are mainly used in the RF field, such as power amplifiers in 5G communication and radio detectors in national defense.
The manufacturing of silicon carbide substrate products involves equipment development, raw material synthesis, crystal growth, crystal cutting, wafer processing, cleaning and testing, and many other links. In terms of raw materials, Songshan Boron industry provides silicon carbide raw materials for the market, and has achieved small batch sales. The third generation semiconductor materials represented by silicon carbide play a key role in modern industry, with the acceleration of penetration of new energy vehicles and photovoltaic applications, the demand for silicon carbide substrate is about to usher in an inflection point
| Item | Specifications | |
|---|---|---|
| Polytype | 4H -SiC | 6H- SiC |
| Diameter | 2 inch | 3 inch | 4 inch | 6inch | 2 inch | 3 inch | 4 inch | 6inch |
| Thickness | 330 μm ~ 350 μm | 330 μm ~ 350 μm |
| Conductivity | N – type / Semi-insulating | N – type / Semi-insulating |
| Dopant | N2 ( Nitrogen )V ( Vanadium ) | N2 ( Nitrogen ) V ( Vanadium ) |
| Orientation | On axis <0001> | On axis <0001> |
| Resistivity | 0.015 ~ 0.03 ohm-cm | 0.02 ~ 0.1 ohm-cm |
| Micropipe Density(MPD) | ≤10/cm2 ~ ≤1/cm2 | ≤10/cm2 ~ ≤1/cm2 |
| TTV | ≤ 15 μm | ≤ 15 μm |
| Bow / Warp | ≤25 μm | ≤25 μm |
| Surface | DSP/SSP | DSP/SSP |
| Grade | Production / Research grade | Production / Research grade |
| Crystal Stacking Sequence | ABCB | ABCABC |
| Lattice parameter | a=3.076A , c=10.053A | a=3.073A , c=15.117A |
| Eg/eV(Band-gap) | 3.27 eV | 3.02 eV |
| ε(Dielectric Constant) | 9.6 | 9.66 |
| Refraction Index | n0 =2.719 ne =2.777 | n0 =2.707 , ne =2.755 |
Compared with silicon devices, silicon carbide (SiC) power devices can effectively achieve high efficiency, miniaturization and light weight of power electronic systems. The energy loss of SiC power devices is only 50% of Si devices, and the heat generation is only 50% of silicon devices, SiC also has a higher current density. At the same power level, the volume of SiC power modules is significantly smaller than that of silicon power modules. Taking the intelligent power module IPM as an example, using SiC power devices, the module volume can be reduced to 1/3 to 2/3 of silicon power modules.
ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .
1--What size are SiC wafers? We have 2inch 3inch 4inch 6inch 8inch in stock now.
2--How much does a SiC wafer cost? It will depend on your demands
3--How thick are silicon carbide wafers? Generally speaking, the SiC wafer thickness is 0.35 and 0.5mm. We also have accept customized.
4--What is the use of SiC wafer? SBD, MOS, and others
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) it is fine If you have your own express account ,If not,we could help you ship them and
Freight is in accordance with the actual settlement.
Q: How to pay?
A: T/T 100％ deposit before delivery.
Q: What's your MOQ?
A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.
(2) For customized commen products, the MOQ is 10pcs up.
Q: What's the delivery time?
A: (1) For the standard products
For inventory: the delivery is 5 workdays after you place the order.
For customized products: the delivery is 2 -4 weeks after you order contact.
Q: Do you have standard products?
A: Our standard products in stock. as like substrates 4inch 0.35mm.
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, op...
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