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China factory - SHANGHAI FAMOUS TRADE CO.,LTD

SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
  • Verified Supplier

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Ceramic Parts

Manufacturer of a wide range of products which include 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor,High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N,Silicon Carbide Trays SiC...

Quality 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor for sale

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8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor

  1. MOQ: 1pcs

  2. Price: By case

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Payment Terms T/T, Western Union, MoneyGram
Supply Ability 1-50pcs/month
Delivery Time 1-6weeks
Packaging Details single wafer package in 100-grade cleaning room
Material SiC single crystal 4H-N type
Grade Dummy /Production grade
Thicnkss 0.35mm 0.5mm
Suraface double side polished
Application device maker polishing test
Diameter 200±0.5mm
Brand Name ZMKJ
Model Number 8inch sic wafers 4h-n
Place of Origin CHINA
Certification ROHS

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Quality High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N for sale

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High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N

  1. MOQ: 5

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Delivery Time 2 weeks
Payment Terms 100%T/T
Supply Ability 100000
Material Silicon Carbide
Diameter 2inch 3inch 4inch 6inch 8inch
Grade Production/ Research/ Dummy
Thickness 350um 500um
Conductivity High/Low Conductivity
Orientation On-Axis/Off-Axis
Resistivity High/Low Resistivity
Bow/Warp ≤50um
Brand Name ZMSH
Model Number Silicon Carbide
Place of Origin China

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Quality Silicon Carbide Trays SiC Wafers Tray Plate For ICP Etching MOCVD Susceptor Wear Resistant for sale

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Silicon Carbide Trays SiC Wafers Tray Plate For ICP Etching MOCVD Susceptor Wear Resistant

  1. MOQ: 5

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Payment Terms T/T
Supply Ability 5
Delivery Time 2-4 weeks
Chemical Composition SiC coated graphite
Flexural strength 470Mpa
Thermal conductivity: 300 W/mK
Function CVD-SiC
Density 3.21 g/cc
Thermal expansion 4 10-6/K
Ash <5ppm
HS Code 6903100000
Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)
Brand Name ZMSH
Model Number SiC wafers tray
Place of Origin China ZMSH

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Quality SiC Ceramic Tray Plate Wafer Holder For ICP Etching Process In Epitaxial Growth Processing for sale

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SiC Ceramic Tray Plate Wafer Holder For ICP Etching Process In Epitaxial Growth Processing

  1. MOQ: 25

  2. Price: Undetermined

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Payment Terms T/T
Supply Ability 1000pcs/week
Delivery Time 2-4weeks
Packaging Details foamed plastic+carton
Thermal Conductivity Excellent heat dissipation, ensures uniform temperature control in high-temperature processes.
High-Temperature Stability Can withstand temperatures up to 2,700°C, making it ideal for high-heat environments.
Wear Resistance High hardness and durability, ideal for repeated handling and mechanical stress.
Brand Name ZMSH
Model Number SiC Ceramic Tray/Plate/Wafer
Place of Origin China

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Quality Alumina Ceramic / Mechanical Arm / Suction Cup / Ceramic Structural Parts Al2O3 for sale

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Alumina Ceramic / Mechanical Arm / Suction Cup / Ceramic Structural Parts Al2O3

  1. MOQ: 25

  2. Price: Undetermined

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Payment Terms T/T
Supply Ability 1000pcs/week
Delivery Time 2-4weeks
Packaging Details foamed plastic+carton
Chemical Composition Primarily Al₂O₃ (Aluminum Oxide)
Density 3.95 - 4.05 g/cm³
Hardness 9 (Mohs hardness, close to diamond)
Melting Point 2050°C
Thermal Expansion 7.8 × 10⁻⁶ /°C (20-1000°C)
7.8 × 10⁻⁶ /°C (20-1000°C) 20-30 W/m·K
Specific Heat Capacity 0.9 J/g·K
Compressive Strength 200 - 500 MPa
Flexural Strength 200 - 400 MPa
Fracture Toughness 3 - 5 MPa·m¹/²
Electrical Resistivity 10¹⁴ - 10¹⁸ Ω·cm
High Temperature Performance Up to 1700°C
Brand Name ZMSH
Model Number Indium Arsenide (InAs) Substrate
Place of Origin China

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Quality Silicon Carbide Ceramic Tray Used To Support Materials Semiconductor Wafers Excellent Corrosion Resistance for sale

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Silicon Carbide Ceramic Tray Used To Support Materials Semiconductor Wafers Excellent Corrosion Resistance

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Payment Terms T/T
Delivery Time 2-4weeks
Purity 99.9%
Color Black
Density 3.14g/cm3
Poisson's ratio 0.17
Fracture toughness 2~3MPa m1/2
MPa m1/2 4.1
Brand Name ZMSH
Place of Origin China

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Quality Silicon Carbide Ceramic Tray With CVD SiC Coating Size Customized High-temperature Sintering for sale

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Silicon Carbide Ceramic Tray With CVD SiC Coating Size Customized High-temperature Sintering

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Payment Terms T/T
Delivery Time 2-4weeks
SiC3N Purity 99.9%
Color black
Flexual strength 410MPa
Young's modulus 430GPa
Vicker's hardness 28.0GPa
Poisson's ratio 0.17
Fracture toughness 2~3MPa m1/2
Specific heat 0.68×103
Brand Name ZMSH
Place of Origin China

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Quality SiC Ceramic Tray Plate For 2inch 4inch 6inch Wafer Processing And  Custom Size for sale

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SiC Ceramic Tray Plate For 2inch 4inch 6inch Wafer Processing And Custom Size

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Purity 99.9%
Color Black
Density 3.14g/cm3
Flexual strength 410MPa
Young's modulus 430GPa
Poisson's ratio 0.17
Fracture toughness 2~3MPa m1/2
Coefficient of thermal expansion 4.1x10-6 [Normal temperature ~ 800℃]
Brand Name ZMSH

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Quality 6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates for sale

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6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates

  1. MOQ: 5-10pcs

  2. Price: By case

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Payment Terms T/T, Western Union, MoneyGram
Supply Ability 1000pcs/week
Delivery Time 1-3weeks
Packaging Details necessary pack for graphite tray
product name 6 Inch Silicon Carbide
Material Graphite SiC Wafer Tray
Grade GSK-II/HPM-II/HPM-III
Suraface polished/grinding
Application Electrolysis
Diameter 6inch
Brand Name ZMKJ
Model Number 6inch
Place of Origin CHINA

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  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Rm5-616,NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
  • https://www.sapphire-substrate.com/

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