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Manufacturer of a wide range of products which include 8inch 200mm Polishing Silicon Carbide Ingot Substrate Sic Chip Semiconductor,High Resistivity 8inch 200mm Silicon Carbide Wafer Production Grade 4H-N,Single Crystal InP Indium...
MOQ: 1pcs
Price: By case
Payment Terms | T/T, Western Union, MoneyGram |
Supply Ability | 1-50pcs/month |
Delivery Time | 1-6weeks |
Packaging Details | single wafer package in 100-grade cleaning room |
Material | SiC single crystal 4H-N type |
Grade | Dummy /Production grade |
Thicnkss | 0.35mm 0.5mm |
Suraface | double side polished |
Application | device maker polishing test |
Diameter | 200±0.5mm |
Brand Name | ZMKJ |
Model Number | 8inch sic wafers 4h-n |
Place of Origin | CHINA |
Certification | ROHS |
MOQ: 5
Price:
Delivery Time | 2 weeks |
Payment Terms | 100%T/T |
Supply Ability | 100000 |
Material | Silicon Carbide |
Diameter | 2inch 3inch 4inch 6inch 8inch |
Grade | Production/ Research/ Dummy |
Thickness | 350um 500um |
Conductivity | High/Low Conductivity |
Orientation | On-Axis/Off-Axis |
Resistivity | High/Low Resistivity |
Bow/Warp | ≤50um |
Brand Name | ZMSH |
Model Number | Silicon Carbide |
Place of Origin | China |
MOQ: 3pcs
Price: By case
Payment Terms | T/T, Western Union |
Supply Ability | 500pcs |
Delivery Time | 2-4weeks |
Packaging Details | single wafer package in 1000-grade cleaning room |
Material | InP |
growth method | vFG |
SIZE | 2~ 4 INCH |
Thickness | 350-650um |
application | III-V direct bandgap semiconductor material |
surface | ssp/dsp |
package | single wafer box |
Brand Name | zmkj |
Model Number | InP |
Place of Origin | CHINA |
MOQ: 5pcs
Price: By case
Payment Terms | T/T, Western Union, paypal |
Supply Ability | 50pcs/month |
Delivery Time | in 30days |
Packaging Details | single wafer container in cleaning room |
layer | GaN template |
layer thickness | 1-5um |
Melt point (°C) | 1725°C |
Conductivity | Semi-insulating, Fe-doped,Mg-doped |
Electrical Resistivity | >1E6 Ohm-cm |
Density | 5.95 g/cm3 |
Brand Name | ZMKJ |
Model Number | Beta Coefficient-Ga2O3 |
Place of Origin | China |
MOQ: 5pcs
Price: By case
Payment Terms | T/T, Western Union, paypal |
Supply Ability | 50pcs/month |
Delivery Time | in 30days |
Packaging Details | single wafer container in cleaning room |
layer | GaN template |
layer thickness | 1-5um |
Melt point (°C) | 1725°C |
Conductivity | Semi-insulating, Fe-doped,Mg-doped |
Electrical Resistivity | >1E6 Ohm-cm |
Density | 5.95 g/cm3 |
Brand Name | ZMKJ |
Model Number | Beta Coefficient-Ga2O3 |
Place of Origin | China |
MOQ: 3pcs
Price: By case
Payment Terms | Western Union, T/T, , MoneyGram |
Supply Ability | 100pcs |
Delivery Time | 2-4weeks |
Packaging Details | single wafer box |
material | GaN-On-Silicon/Sapphire |
Thickness | 350um |
Diameter | 50.8mm/101mm |
Conductivity | N-type or semi-insulting |
Orientation | C plane (0001) off angle toward M-axis 0.35 ± 0.15° |
BOW | ≤ 20 μm |
Brand Name | zmkj |
Model Number | |
Place of Origin | China |
MOQ: 1pcs
Price: By case
Payment Terms | Western Union, T/T |
Supply Ability | 5000kg |
Delivery Time | 3-10days |
Packaging Details | 25pcs cassettle wafer case in 100 grade cleaning bag |
Material 1 | LT Lithium tantalate (LiTaO3) crystal |
Material 2 | LN Lithium Niobate (LiNbO3) crystal |
orientaiton | Y-42°/36°/108°/0° |
thickness | 1-10mm |
color | colorless or black |
grade | saw /optical |
size | 2-6inch |
Doped | Fe,Mg |
Brand Name | ZMSH |
Model Number | LN/LT |
Certification | ROHS |
Place of Origin | China |
MOQ: 10pcs
Price: By quantites
Payment Terms | Western Union, T/T |
Delivery Time | 2-4weeks |
Packaging Details | single wafer container |
MATERIAL | Silicon wafer and SiO2 |
Application | Star coupler, Splitter |
SiO2 thick | 25um +/-6um |
Package | single wafer container |
Brand Name | ZMSH |
Model Number | SI WAFER |
Certification | ROHS |
Place of Origin | CHINA |
MOQ: 3pcs
Price: By case
Payment Terms | T/T, Western Union |
Supply Ability | 500pcs |
Delivery Time | 2-4weeks |
Packaging Details | single wafer package in 1000-grade cleaning room |
Material | Indium arsenide (InAs) Monocrystalline crystal |
growth method | vFG |
SIZE | 2-4INCH |
Thickness | 300-800um |
application | III-V direct bandgap semiconductor material |
surface | ssp/dsp |
package | single wafer box |
Brand Name | zmkj |
Model Number | Indium arsenide (InAs) |
Place of Origin | CHINA |
MOQ: 25
Price:
Payment Terms | T/T |
Delivery Time | 4-6weeks |
Material | Single Crystal Silicon Wafer |
Growth Method | MCZ |
Orientation | <100> |
Type/ Dopant | P/ Boron |
Thermal Expansion Coefficient | 2.6·10-6°C -1 |
Electrical Resistivity | 10-20 ohm-cm |
Brand Name | ZMSH |
Model Number | Sapphire Wafer |
Place of Origin | China |
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