China factories

China factory - Shenzhen A.N.G Technology Co., Ltd

Shenzhen A.N.G Technology Co., Ltd

  • China,Shenzhen ,Guangdong
  • Site Member

Leave a Message

we will call you back quickly!

Submit Requirement
China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

  1. China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
  2. China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
  3. China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device
  4. China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

  1. MOQ: 100
  2. Price: Depends on size and quantity
  3. Get Latest Price
Payment Terms T/T, Western Union,Paypal
Supply Ability 500,000pcs per month
Delivery Time 8~10 working days
Packaging Details Singer Wafer in 100 Grade Cleaning Room
Color Green
Mpd <2cm-2
Size <2cm-2
Transport Package Singer Wafer in 100 Grade Cleaning Room
Brand Name ANG
Model Number SIC-W05
Certification ISO
Place of Origin Guangdong, China

View Detail Information

Contact Now Ask for best deal
Get Latest Price Request a quote
  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union,Paypal Supply Ability 500,000pcs per month
Delivery Time 8~10 working days Packaging Details Singer Wafer in 100 Grade Cleaning Room
Color Green Mpd <2cm-2
Size <2cm-2 Transport Package Singer Wafer in 100 Grade Cleaning Room
Brand Name ANG Model Number SIC-W05
Certification ISO Place of Origin Guangdong, China

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

 

 

Regarding Silicon Carbide(SiC) Crystal

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

 

SiC Application

1. high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,diodes, IGBT, MOSFET
2. optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED



Specification

Grade
Zero MPD Grade
Production Grade
Research Grade
Dummy Grade
Diameter
50.6mm±0.2mm
Thickness
1000±25um Or other customized thickness
Wafer Orientation
Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
Micropipe Density
≤0 cm-2
≤2 cm-2
≤5 cm-2
≤30 cm-2
Resistivity 4H-N
0.015~0.028 Ω•cm
Resistivity 4/6H-SI
≥1E7 Ω·cm
Primary Flat
{10-10}±5.0° or round shape
Primary Flat Length
18.5 mm±2.0 mm or round shape
Secondary Flat Length
10.0mm±2.0 mm
Secondary Flat Orientation
Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion
1 mm
TTV/Bow /Warp
≤10μm /≤10μm /≤15μm
Roughness
Polish Ra≤1 nm / CMP Ra≤0.5 nm
Cracks by high intensity light
None
1 allowed, ≤2 mm
Cumulative length ≤ 10mm, single length≤2mm
Hex Plates by high intensity light
Cumulative area ≤1%
Cumulative area ≤1%
Cumulative area ≤3%
Polytype Areas by high intensity light
None
Cumulative area ≤2%
Cumulative area ≤5%
Scratches by high intensity light
3 scratches to 1×wafer diameter cumulative length
5 scratches to 1×wafer diameter cumulative length
5 scratches to 1×wafer diameter cumulative length
edge chip
None
3 allowed, ≤0.5 mm each
5 allowed, ≤1 mm each

 

Common Size In Stock

4H-N Type / High Purity SiC wafer/ingots

2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots

4H Semi-insulating / High Purity SiC wafer

2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
 
 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
Customzied size for 2-6inch
 

 

Product Picture

 

PACKAGE

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Exporter,Trading Company,Seller

  • Year Established:

    2010

  • Total Annual:

    5,000,000-6,000,000

  • Employee Number:

    100~150

  • Ecer Certification:

    Site Member

     Shenzhen A.N.G Technology Co., Ltd is a collection research and development, production, sales in the intergration of RFID high-tech innovative company. We have a rich experience, strong technical ability of research and development, production and management team. At the same...      Shenzhen A.N.G Technology Co., Ltd is a collection research and development, production, sales in the intergration of RFID high-tech innovative company. We have a rich experience, strong technical ability of research and development, production and management team. At the same...

+ Read More

Get in touch with us

  • Reach Us
  • Shenzhen A.N.G Technology Co., Ltd
  • Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109
  • https://www.radiofrequency-tags.com/

Leave a Message, we will call you back quickly!

Email

Check your email

Phone Number

Check your phone number

Requirement Details

Your message must be between 20-3,000 characters!

Submit Requirement