Hangzhou Freqcontrol Electronic Technology Ltd.
| Payment Terms | T/T |
| Supply Ability | 100000 Pieces/Month |
| Delivery Time | 1 - 4 weeks |
| Packaging Details | Cassette / Jar, put in a carton with PE foam. |
| Material | Silicon Wafer |
| Surface | Double Side Polish, Single Side Polish, Lap |
| Diameter | 2'' - 12'' or as required |
| Thickness | 0.05mm - 10mm |
| Orientation | <100>, <111>, <110> |
| Resistivity | 0.001 – 300 ohm/cm |
| Type | P type, N type, Intrinsic |
| Dopant | B, Ph, As or Undoped |
| Brand Name | BonTek |
| Model Number | Silicon Wafer |
| Certification | ISO:9001, ISO:14001 |
| Place of Origin | China |
View Detail Information
Explore similar products
2'' To 8'' Polished Silicon Wafer In Prime, Test, Monitor, SEMI Standard
12 Inch Semiconductor Silicon Wafer Prime Test Dummy Wafers
2'' To 12'' P Type N Type Silicon Wafer With High Resistivity For Semiconductor
Boron Doped Phosphorus Doped Silicon Wafer With High Resistivity For Semiconduct
Product Specification
| Payment Terms | T/T | Supply Ability | 100000 Pieces/Month |
| Delivery Time | 1 - 4 weeks | Packaging Details | Cassette / Jar, put in a carton with PE foam. |
| Material | Silicon Wafer | Surface | Double Side Polish, Single Side Polish, Lap |
| Diameter | 2'' - 12'' or as required | Thickness | 0.05mm - 10mm |
| Orientation | <100>, <111>, <110> | Resistivity | 0.001 – 300 ohm/cm |
| Type | P type, N type, Intrinsic | Dopant | B, Ph, As or Undoped |
| Brand Name | BonTek | Model Number | Silicon Wafer |
| Certification | ISO:9001, ISO:14001 | Place of Origin | China |
| High Light | Phi 8'' Silicon Wafer ，N-Type Polished Wafer ，2'' P-Type Silicon Wafer | ||
Phi 2'' to 8'' Thermal Oxide Silicon Wafer N-Type P-Type With an Insulating Oxide Layer
BonTek provides high quality silicon thermal oxide wafers in all diameters from 2″ to 300mm. We ensure your specific requirements are met by choosing prime grade and defecting free silicon wafer as a substrate so that a high uniform layer of thermal oxide is formed in a furnace.
In micro-technology, the main insulating material used is Silicon dioxide which in chemical symbols is written as SiO2. In order to produce an insulating oxide layer, thermal oxidation, which is the most common technique used to obtain the layer is used. The process of obtaining the layer is performed in a furnace.
Thermal Oxide On Both Sides Of Wafer
Film thickness: 100Å – 10µm on both sides
Film thickness Tolerance: Target ±5%
Film stress: - 320±50 MPa Compressive
Film thickness: 100Å – 10,000Å on both sides
Film thickness Tolerance: Target ±5%
Film stress: -320±50 MPa Compressive
| SEMI Standard | 2" (50.8mm) | 3" (76.2mm) | 4" (100mm) | 5" (125mm) | 6" (150mm) | 8" (200mm) | 12" (300mm) |
|---|---|---|---|---|---|---|---|
| Diameter | 50.8 ± 0.38mm | 76.2 ± 0.63mm | 100 ± 0.5mm | 125 ± 0.5mm | 150 ± 0.2mm | 200 ± 0.2mm | 300 ± 0.2mm |
| Thickness | 279 ± 25µm | 381 ± 25µm | 525 ± 20 µm or 625 ± 20µm | 625 ± 20µm | 675 ± 20µm or 625 ± 15µm | 725 ± 20µm | 775 ± 20µm |
| Type | P, N or Intrinsic | ||||||
| Dopant | B, Ph, As or Undoped | ||||||
| Orientation | <100>, <111>, <110> | ||||||
| Rsistivity | 0.001 – 300 ohm/cm | ||||||
| Primary Flat Length | 15.88 ± 1.65mm | 22.22 ± 3.17mm | 32.5 ± 2.5mm | 42.5 ± 2.5mm | 57.5 ± 2.5mm | Notch | Notch |
| Secondary Flat Length | 8 ± 1.65mm | 11.18 ± 1.52mm | 18 ± 2.0mm | 27.5 ± 2.5mm | 37.5 ± 2.5mm | NA | NA |
| Surface Finish | SSP, DSP, Etched, or Lapped | ||||||
Acceptance Check
1. The product is fragile. We have adequately packed it and labeled it fragile. We deliver through excellent domestic and international express companies to ensure transportation quality.
2. After receiving the goods, please handle with care and check whether the outer carton is in good condition. Carefully open the outer carton and check whether the packing boxes are in alignment. Take a picture before you take them out.
3. Please open the vacuum package in a clean room when the products are to be applied.
4. If the products are found damaged during courier, please take a picture or record a video immediately. DO NOT take the damaged products out of the packaging box! Contact us immediately and we will solve the problem well.
Company Details
Business Type:
Manufacturer,Trading Company
Year Established:
1999
Total Annual:
800M-1500M
Employee Number:
10~99
Ecer Certification：
Verified Supplier
Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin... Founded in 1999, Hangzhou Freqcontrol Electronic Technology Ltd. is a China leading manufacturer of piezoelectric crystal wafers, substrates, components and single crystal growth. We, known as the "CQT Group" in global market, headquartered in Hangzhou, China, empowered by its manufacturin...
Get in touch with us
Leave a Message, we will call you back quickly!