Supply Ability | 1000pcs/Months |
Delivery Time | 3-5Workingdays |
Packaging Details | Standard |
Terminal capacitance (typ.) | 6 PF |
Package | Metal |
Cutoff frequency (typ.) | 600 MHz |
Spectral response range | 400 To 1000 Nm |
Photosensitivity (typ.) | 0.5 A/W |
Breakdown voltage (typ.) | 200 V |
Dark current (max.) | 2 NA |
Photosensitive area | φ1 Mm |
Brand Name | Hamamatsu |
Model Number | S12060-10 |
Place of Origin | Japan |
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Product Specification
Supply Ability | 1000pcs/Months | Delivery Time | 3-5Workingdays |
Packaging Details | Standard | Terminal capacitance (typ.) | 6 PF |
Package | Metal | Cutoff frequency (typ.) | 600 MHz |
Spectral response range | 400 To 1000 Nm | Photosensitivity (typ.) | 0.5 A/W |
Breakdown voltage (typ.) | 200 V | Dark current (max.) | 2 NA |
Photosensitive area | φ1 Mm | Brand Name | Hamamatsu |
Model Number | S12060-10 | Place of Origin | Japan |
High Light | S12060-10 ,S12060-10 Si Photodiode ,Highly Sensitive Si Photodiode |
The UV Photodiode Sensor is a type of near infrared device that is designed to detect ultraviolet to infrared light. It features a photosensitive area of φ1mm and has a typical breakdown voltage of 200V. This device also has a low capacitance and is encased in a metal package, making it highly durable and resistant to external environmental factors. Furthermore, it has a temperature coefficient of breakdown voltage of 0.4V/℃, making it suitable for applications that require robust operation in varying temperatures. This UV Photodiode Sensor is ideal for use in a variety of applications, including medical imaging, laser ranging, and robotic navigation.
Parameters | Values |
---|---|
Terminal capacitance (typ.) | 6 PF |
Spectral response range | 400 To 1000 Nm |
Gain (typ.) | 100 |
Cutoff frequency (typ.) | 600 MHz |
Photosensitive area | φ1 Mm |
Dark current (max.) | 2 NA |
Package Category | TO-18 |
Temperature coefficient of breakdown voltage (typ.) | 0.4 V/℃ |
Type | Near Infrared Type |
Package | Metal |
Si Photodiode | Yes |
Plastic Package | No |
Hamamatsu's S12060-10 UV Photodiode Sensor is a near infrared type with a spectral response range from 400 to 1000 nm, making it perfect for applications in the ultraviolet light range. It is designed with a plastic package, metal ceramic package, and high speed frequency. It offers high sensitivity and low dark current of only 2 NA. The peak sensitivity wavelength is typically 800 nm.
The S12060-10 is ideal for a range of industrial and medical applications that require ultraviolet light detection and high-speed frequency performance. Some of these applications include UV curing, UV inspection, DNA sequencing, medical imaging, and spectroscopy. It can also be used in aerospace, automotive, communication, and security industries.
The S12060-10 UV Photodiode Sensor from Hamamatsu is a reliable and cost-effective solution for ultraviolet light detection. It offers high sensitivity and low dark current, making it suitable for a variety of applications. It is designed with a plastic package, metal ceramic package, and high speed frequency.
Hamamatsu offers custom services for UV Photodiode Sensor, featuring high UV sensitivity, metal ceramic, and Si Photodiode. The model number is S12060-10, and originates from Japan. It is Near Infrared Type, with photosensitivity of 0.5 A/W. The package is metal, with a TO-18 package category. The terminal capacitance is 6 PF (typ.).
Packaging and Shipping for UV Photodiode Sensor:
Company Details
Business Type:
Manufacturer,Trading Company
Year Established:
2006
Total Annual:
900000-1000000
Employee Number:
50~80
Ecer Certification:
Verified Supplier
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