Shenzhen Hua Xuan Yang Electronics Co.,Ltd
| Payment Terms | L/C T/T Western Union |
| Supply Ability | 18,000,000PCS / Per Day |
| Delivery Time | 1 - 2 Weeks |
| Packaging Details | Boxed |
| Product name | Mosfet Power Transistor |
| APPLICATION | Power Management |
| FEATURE | Excellent RDS(on) |
| Power mosfet transistor | Enhancement Mode Power MOSFET |
| VDS | -100v |
| Brand Name | Hua Xuan Yang |
| Model Number | 2N60 |
| Certification | RoHS、SGS |
| Place of Origin | ShenZhen China |
View Detail Information
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Product Specification
| Payment Terms | L/C T/T Western Union | Supply Ability | 18,000,000PCS / Per Day |
| Delivery Time | 1 - 2 Weeks | Packaging Details | Boxed |
| Product name | Mosfet Power Transistor | APPLICATION | Power Management |
| FEATURE | Excellent RDS(on) | Power mosfet transistor | Enhancement Mode Power MOSFET |
| VDS | -100v | Brand Name | Hua Xuan Yang |
| Model Number | 2N60 | Certification | RoHS、SGS |
| Place of Origin | ShenZhen China | ||
| High Light | n channel mosfet transistor ，high voltage transistor | ||
2N60-TC3 Power MOSFET
2A, 600V N-CHANNEL POWER MOSFET
The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
RDS(ON) < 7.0 Ω @ VGS = 10 V, ID = 1.0A
High Switching Speed
| Ordering Number | Package | Pin Assignment | Packing | |||
| Lead Free | Halogen Free | 1 | 2 | 3 | ||
| 2N60L-TF1-T | 2N60G-TF1-T | TO-220F1 | G | D | S | Tube |
| 2N60L-TF3-T | 2N60G-TF3-T | TO-220F | G | D | S | Tube |
| 2N60L-TM3-T | 2N60G-TM3-T | TO-251 | G | D | S | Tube |
QW-R205-461.A
n ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Drain-Source Voltage | VDSS | 600 | V | |
| Gate-Source Voltage | VGSS | ± 30 | V | |
| Drain Current | Continuous | ID | 2 | A |
| Pulsed (Note 2) | IDM | 4 | A | |
| Avalanche Energy | Single Pulsed (Note 3) | EAS | 84 | mJ |
| Peak Diode Recovery dv/dt (Note 4) | dv/dt | 4.5 | V/ns | |
| Power Dissipation | TO-220F/TO-220F1 | PD | 23 | W |
| TO-251 | 44 | W | ||
| Junction Temperature | TJ | +150 | °C | |
| Storage Temperature | TSTG | -55 ~ +150 | °C | |
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
4. Repetitive Rating: Pulse width limited by maximum junction temperature.
5. L = 84mH, IAS =1.4A, VDD = 50V, RG = 25 Ω Starting TJ = 25°C
6. ISD ≤ 2.0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ = 25°C
| PARAMETER | SYMBOL | RATINGS | UNIT | |
| Junction to Ambient | TO-220F/TO-220F1 | θJA | 62.5 | °C/W |
| TO-251 | 100 | °C/W | ||
| Junction to Case | TO-220F/TO-220F1 | θJC | 5.5 | °C/W |
| TO-251 | 2.87 | °C/W | ||
n ELECTRICAL CHARACTERISTICS (TJ = 25°С, unless otherwise specified)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
| OFF CHARACTERISTICS | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID= 250μA | 600 | V | |||
| Drain-Source Leakage Current | IDSS | VDS=600V, VGS=0V | 1 | µA | |||
| Gate-Source Leakage Current | Forward | IGSS | VGS=30V, VDS=0V | 100 | nA | ||
| Reverse | VGS=-30V, VDS=0V | -100 | nA | ||||
| ON CHARACTERISTICS | |||||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250μA | 2.0 | 4.0 | V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=1.0A | 7.0 | Ω | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Input Capacitance | CISS |
VGS=0V, VDS=25V, f=1.0 MHz | 190 | pF | |||
| Output Capacitance | COSS | 28 | pF | ||||
| Reverse Transfer Capacitance | CRSS | 2 | pF | ||||
| SWITCHING CHARACTERISTICS | |||||||
| Total Gate Charge (Note 1) | QG | VDS=200V, VGS=10V, ID=2.0A IG=1mA (Note 1, 2) | 7 | nC | |||
| Gateource Charge | QGS | 2.9 | nC | ||||
| Gate-Drain Charge | QGD | 1.9 | nC | ||||
| Turn-on Delay Time (Note 1) | tD(ON) |
VDS=300V, VGS=10V, ID=2.0A, RG=25Ω (Note 1, 2) | 4 | ns | |||
| Rise Time | tR | 16 | ns | ||||
| Turn-off Delay Time | tD(OFF) | 16 | ns | ||||
| Fall-Time | tF | 19 | ns | ||||
| SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | |||||||
| Maximum Body-Diode Continuous Current | IS | 2 | A | ||||
| Maximum Body-Diode Pulsed Current | ISM | 8 | A | ||||
| Drain-Source Diode Forward Voltage (Note 1) | VSD | VGS=0V, IS=2.0A | 1.4 | V | |||
| Reverse Recovery Time (Note 1) | trr | VGS=0V, IS=2.0A, dIF/dt=100A/µs (Note1) | 232 | ns | |||
| Reverse Recovery Charge | Qrr | 1.1 | µC | ||||
Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.
Company Details
Business Type:
Manufacturer
Year Established:
2008
Total Annual:
8000000-10000000
Employee Number:
150~200
Ecer Certification：
Active Member
Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...
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