Shenzhen Hua Xuan Yang Electronics Co.,Ltd
| Payment Terms | L/C T/T Western Union |
| Supply Ability | 18,000,000PCS / Per Day |
| Delivery Time | 1 - 2 Weeks |
| Packaging Details | Boxed |
| Product name | Mosfet Power Transistor |
| Type | N Channel |
| Drain-Source Voltage | 200 V |
| Gate-Source Voltage | ±20V |
| Applications | LED Drive |
| Brand Name | Hua Xuan Yang |
| Model Number | 5N20DY TO-252 |
| Certification | RoHS、SGS |
| Place of Origin | ShenZhen China |
View Detail Information
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Product Specification
| Payment Terms | L/C T/T Western Union | Supply Ability | 18,000,000PCS / Per Day |
| Delivery Time | 1 - 2 Weeks | Packaging Details | Boxed |
| Product name | Mosfet Power Transistor | Type | N Channel |
| Drain-Source Voltage | 200 V | Gate-Source Voltage | ±20V |
| Applications | LED Drive | Brand Name | Hua Xuan Yang |
| Model Number | 5N20DY TO-252 | Certification | RoHS、SGS |
| Place of Origin | ShenZhen China | ||
| High Light | n channel mosfet transistor ，high voltage transistor | ||
N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive
Mosfet Power Transistor Description
The AP50N20D uses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other
Mosfet Power Transistor General Features
V DS =200V,I D =5A
R DS(ON) <520mΩ @ V GS =4.5V
Mosfet Power Transistor Application
Load switching
Hard switched and high frequency circuits Uninterruptible power supply
Package Marking and Ordering Information
| Product ID | Pack | Marking | Qty(PCS) |
| 5N20D | TO-252 | 5N20D | 3000 |
| 5N20Y | TO-251 | 5N20Y | 4000 |
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 200 | V |
| Gate-Source Voltage | VGS | ±20 | V |
| Drain Current-Continuous | ID | 5 | A |
| Drain Current-Pulsed (Note 1) | IDM | 20 | A |
| Maximum Power Dissipation | PD | 30 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ |
Thermal Characteristic
| Thermal Resistance,Junction-to-Ambient (Note 2) | RθJA | 4.17 | ℃/W |
Electrical Characteristics (TA=25℃unless otherwise noted)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 200 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1.2 | 1.7 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2A | - | 520 | 580 | mΩ |
| Forward Transconductance | gFS | VDS=15V,ID=2A | - | 8 | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss |
VDS=25V,VGS=0V, F=1.0MHz | - | 580 | - | PF |
| Output Capacitance | Coss | - | 90 | - | PF | |
| Reverse Transfer Capacitance | Crss | - | 3 | - | PF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) |
VDD=100V, RL=15Ω VGS=10V,RG=2.5Ω | - | 10 | - | nS |
| Turn-on Rise Time | tr | - | 12 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 15 | - | nS | |
| Turn-Off Fall Time | tf | - | 15 | - | nS | |
| Total Gate Charge | Qg |
VDS=100V,ID=2A, VGS=10V | - | 12 | nC | |
| Gate-Source Charge | Qgs | - | 2.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.8 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=2A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 5 | A | |
Notes:
|
Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 0.483 TYP. | 0.190 TYP. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 TYP. | 0.114 TYP. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 TYP. | 0.063 TYP. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| Φ | 1.100 | 1.300 | 0.043 | 0.051 |
| θ | 0° | 8° | 0° | 8° |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 TYP. | 0.211 TYP. | ||
Company Details
Business Type:
Manufacturer
Year Established:
2008
Total Annual:
8000000-10000000
Employee Number:
150~200
Ecer Certification：
Active Member
Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...
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