Payment Terms | L/C T/T Western Union |
Packaging Details | Boxed |
Delivery Time | 1 - 2 Weeks |
Supply Ability | 18,000,000PCS / Per Day |
Storage Temperature | -55-150℃ |
Power mosfet transistor | SOT-23 Tip Power Transistors |
Material | Silicon |
Type | Triode Transistor |
Brand Name | Hua Xuan Yang |
Certification | RoHS、SGS |
Place of Origin | ShenZhen China |
Model Number | MMBT4401 |
View Detail Information
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Product Specification
Payment Terms | L/C T/T Western Union | Packaging Details | Boxed |
Delivery Time | 1 - 2 Weeks | Supply Ability | 18,000,000PCS / Per Day |
Storage Temperature | -55-150℃ | Power mosfet transistor | SOT-23 Tip Power Transistors |
Material | Silicon | Type | Triode Transistor |
Brand Name | Hua Xuan Yang | Certification | RoHS、SGS |
Place of Origin | ShenZhen China | Model Number | MMBT4401 |
High Light | tip pnp transistor ,high power pnp transistor |
SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN)
Switching Transistor
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 40 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current | 600 | mA |
PC | Collector Power Dissipation | 300 | mW |
RΘJA | Thermal Resistance From Junction To Ambient | 417 | ℃/W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~+150 | ℃ |
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
Collector-base breakdown voltage | V(BR)CBO | IC=100μA,IE=0 | 60 | V | ||
Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 40 | V | ||
Emitter-base breakdown voltage | V(BR)EBO | IE=100μA ,IC=0 | 6 | V | ||
Collector cut-off current | ICBO | VCB=50V,IE=0 | 0.1 | μA | ||
Collector cut-off current | ICEX | VCE=35V, VEB=0.4V | 0.1 | μA | ||
Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | μA | ||
DC current gain | hFE1 | VCE=1V, IC=0.1mA | 20 | |||
hFE2 | VCE=1V, IC=1mA | 40 | ||||
hFE3 | VCE=1V, IC=10mA | 80 | ||||
hFE4 | VCE=1V, IC=150mA | 100 | 300 | |||
hFE5 | VCE=2V, IC=500mA | 40 | ||||
Collector-emitter saturation voltage |
VCE(sat) | IC=150mA,IB=15mA | 0.4 | V | ||
IC=500mA,IB=50mA | 0.75 | V | ||||
Base-emitter saturation voltage |
VBE(sat) | IC=150mA,IB=15mA | 0.95 | V | ||
IC=500mA,IB=50mA | 1.2 | V | ||||
Transition frequency | fT | VCE=10V, IC=20mA,f =100MHz | 250 | MHz | ||
Delay time | td | VCC=30V, VBE(off)=-2V IC=150mA , IB1=15mA | 15 | ns | ||
Rise time | tr | 20 | ns | |||
Storage time | ts | VCC=30V, IC=150mA IB1=IB2=15mA | 225 | ns | ||
Fall time | tf | 60 | ns |
Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.
Typical Characterisitics
Package Outline Dimensions
Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
Min | Max | Min | Max | |
A | 0.900 | 1.150 | 0.035 | 0.045 |
A1 | 0.000 | 0.100 | 0.000 | 0.004 |
A2 | 0.900 | 1.050 | 0.035 | 0.041 |
b | 0.300 | 0.500 | 0.012 | 0.020 |
c | 0.080 | 0.150 | 0.003 | 0.006 |
D | 2.800 | 3.000 | 0.110 | 0.118 |
E | 1.200 | 1.400 | 0.047 | 0.055 |
E1 | 2.250 | 2.550 | 0.089 | 0.100 |
e | 0.950 TYP | 0.037 TYP | ||
e1 | 1.800 | 2.000 | 0.071 | 0.079 |
L | 0.550 REF | 0.022 REF | ||
L1 | 0.300 | 0.500 | 0.012 | 0.020 |
θ | 0° | 8° | 0° | 8° |
Company Details
Business Type:
Manufacturer
Year Established:
2008
Total Annual:
8000000-10000000
Employee Number:
150~200
Ecer Certification:
Active Member
Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...
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