Packaging Details | Boxed |
Delivery Time | 1 - 2 Weeks |
Payment Terms | L/C T/T Western Union |
Supply Ability | 18,000,000PCS / Per Day |
Type | Triode Transistor |
Material | Silicon |
Power mosfet transistor | TO-126 Plastic-Encapsulate |
Product name | semiconductor triode type |
Tj | 150℃ |
Place of Origin | ShenZhen China |
Brand Name | Hua Xuan Yang |
Certification | RoHS、SGS |
Model Number | MJE13003 |
View Detail Information
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Product Specification
Packaging Details | Boxed | Delivery Time | 1 - 2 Weeks |
Payment Terms | L/C T/T Western Union | Supply Ability | 18,000,000PCS / Per Day |
Type | Triode Transistor | Material | Silicon |
Power mosfet transistor | TO-126 Plastic-Encapsulate | Product name | semiconductor triode type |
Tj | 150℃ | Place of Origin | ShenZhen China |
Brand Name | Hua Xuan Yang | Certification | RoHS、SGS |
Model Number | MJE13003 | ||
High Light | tip series transistors ,high power pnp transistor |
TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN)
Ÿ Power Switching Applications
MARKING
MJE13003=Device code
Solid dot = Green molding compound device, if none, the normal device
ORDERING INFORMATION
Part Number | Package | Packing Method | Pack Quantity |
MJE13003 | TO-126 | Bulk | 200pcs/Bag |
MJE13003-TU | TO-126 | Tube | 60pcs/Tube |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
Symbol | Parameter | Value | Unit |
VCBO | Collector -Base Voltage | 600 | V |
VCEO | Collector-Emitter Voltage | 420 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current -Continuous | 0.2 | A |
PC | Collector Power Dissipation | 0.75 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55 ~150 | ℃ |
Ta=25 Š unless otherwise specified
Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
Collector-base breakdown voltage | V(BR)CBO | IC= 0.1mA,IE=0 | 600 | V | ||
Collector-emitter breakdown voltage | V(BR)CEO | IC= 1mA,IB=0 | 400 | V | ||
Emitter-base breakdown voltage | V(BR)EBO | IE=0.1mA,IC=0 | 6 | V | ||
Collector cut-off current | ICBO | VCB=600V,IE=0 | 100 | uA | ||
Collector cut-off current | ICEO | VCE=400V,IB=0 | 100 | uA | ||
Emitter cut-off current | IEBO | VEB=7V,IC=0 | 10 | uA | ||
DC current gain | hFE(1)* | VCE=10V, IC=200mA | 20 | 30 | ||
hFE(2) | VCE=10V, IC=250μA | 5 | ||||
Collector-emitter saturation voltage | VCE(sat)1 | IC=200mA,IB=40mA | 0.5 | V | ||
Base-emitter saturation voltage | VBE(sat) | IC=200mA,IB=40mA | 1.1 | V | ||
Transition frequency | fT | VCE=10V, IC=100mA,f=1MHz | 5 | MHz | ||
Fall time | tf | IC=100mA | 0.5 | μs | ||
Storage time | tS* | IC=100mA | 2 | 4 |
TO-92 Package Outline Dimensions
Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
Min | Max | Min | Max | |
A | 2.500 | 2.900 | 0.098 | 0.114 |
A1 | 1.100 | 1.500 | 0.043 | 0.059 |
b | 0.660 | 0.860 | 0.026 | 0.034 |
b1 | 1.170 | 1.370 | 0.046 | 0.054 |
c | 0.450 | 0.600 | 0.018 | 0.024 |
D | 7.400 | 7.800 | 0.291 | 0.307 |
E | 10.600 | 11.000 | 0.417 | 0.433 |
e | 2.290 TYP | 0.090 TYP | ||
e1 | 4.480 | 4.680 | 0.176 | 0.184 |
h | 0.000 | 0.300 | 0.000 | 0.012 |
L | 15.300 | 15.700 | 0.602 | 0.618 |
L1 | 2.100 | 2.300 | 0.083 | 0.091 |
P | 3.900 | 4.100 | 0.154 | 0.161 |
Φ | 3.000 | 3.200 | 0.118 | 0.126 |
Company Details
Business Type:
Manufacturer
Year Established:
2008
Total Annual:
8000000-10000000
Employee Number:
150~200
Ecer Certification:
Active Member
Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...
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