Shenzhen Hua Xuan Yang Electronics Co.,Ltd
| Packaging Details | Boxed |
| Delivery Time | 1 - 2 Weeks |
| Payment Terms | L/C T/T Western Union |
| Supply Ability | 18,000,000PCS / Per Day |
| PC | 1.25W |
| Junction Temperature | 150 ℃ |
| Storage Temperature | -55-150℃ |
| Power mosfet transistor | TO-251-3L Plastic-Encapsulate |
| Material | Silicon |
| Type | Triode Transistor |
| Place of Origin | ShenZhen China |
| Brand Name | Hua Xuan Yang |
| Certification | RoHS、SGS |
| Model Number | D882 |
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Product Specification
| Packaging Details | Boxed | Delivery Time | 1 - 2 Weeks |
| Payment Terms | L/C T/T Western Union | Supply Ability | 18,000,000PCS / Per Day |
| PC | 1.25W | Junction Temperature | 150 ℃ |
| Storage Temperature | -55-150℃ | Power mosfet transistor | TO-251-3L Plastic-Encapsulate |
| Material | Silicon | Type | Triode Transistor |
| Place of Origin | ShenZhen China | Brand Name | Hua Xuan Yang |
| Certification | RoHS、SGS | Model Number | D882 |
| High Light | tip pnp transistor ，high power pnp transistor | ||
TO-251-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)
Power Dissipation
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 40 | V |
| VCEO | Collector-Emitter Voltage | 30 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current -Continuous | 3 | A |
| PC | Collector Power Dissipation | 1.25 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55-150 | ℃ |
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC = 100μA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10mA, IB=0 | 30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100μA, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB= 40 V, IE=0 | 1 | µA | ||
| Collector cut-off current | ICEO | VCE= 30 V, IB=0 | 10 | µA | ||
| Emitter cut-off current | IEBO | VEB= 6 V, IC=0 | 1 | µA | ||
| DC current gain | hFE | VCE= 2 V, IC= 1A | 60 | 400 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC= 2A, IB= 0.2 A | 0.5 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC= 2A, IB= 0.2 A | 1.5 | V | ||
|
Transition frequency |
fT | VCE= 5V, IC=0.1A f =10MHz |
90 |
MHz |
| Rank | R | O | Y | GR |
| Range | 60-120 | 100-200 | 160-320 | 200-400 |
Typical Characteristics
Company Details
Business Type:
Manufacturer
Year Established:
2008
Total Annual:
8000000-10000000
Employee Number:
150~200
Ecer Certification：
Active Member
Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...
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