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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

  • China,Shenzhen ,Guangdong
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China 8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
China 8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

  1. China 8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS

  1. MOQ: 1000-2000 PCS
  2. Price: Negotiated
  3. Get Latest Price
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Product name Mosfet Power Transistor
VDSS 6.0 A
APPLICATION Power Management
FEATURE Low Gate Charge
Power mosfet transistor SOT-23-6L Plastic-Encapsulate
Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Model Number 8205A

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  1. Product Details
  2. Company Details

Product Specification

Packaging Details Boxed Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union Supply Ability 18,000,000PCS / Per Day
Product name Mosfet Power Transistor VDSS 6.0 A
APPLICATION Power Management FEATURE Low Gate Charge
Power mosfet transistor SOT-23-6L Plastic-Encapsulate Place of Origin ShenZhen China
Brand Name Hua Xuan Yang Certification RoHS、SGS
Model Number 8205A
High Light n channel mosfet transistorhigh current mosfet switch

8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET

 

 

General Description

 

 

VDSS= V ID= 6.0 A

z 20

G1

6

D1,D2

5

G2

4

  z  

RDS(on) < Ω@V = 4.5V

25m

GS

  z  

RDS(on) < Ω@V = 2.5V

32m

GS

1 2 3

S1

D1,D2 S2

 

 

 

 

FEATURE

 

z TrenchFET Power MOSFET

z Excellent RDS(on)

z Low Gate Charge

z High Power and Current Handing Capability

z Surface Mount Package

 

 

APPLICATION

 

z Battery Protection

z Load Switch

z Power Management

 

 

Parameter Symbol Test Condition Min Typ Max Unit
STATIC CHARACTERICTISCS
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V
Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S
Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V

 

 

DYNAMIC CHARACTERICTISCS (note4)
Input Capacitance Ciss 800 pF
Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF
Reverse Transfer Capacitance Crss 125 pF

 

 

SWITCHING CHARACTERICTISCS (note 4)
Turn-on delay time td(on) 18 ns
Turn-on rise time tr VDD=10V,VGS=4V, 5 ns
Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns
Turn-off fall time tf 20 ns
Total Gate Charge Qg 11 nC
Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC
Gate-Drain Charge Qgd 2.5 nC

 

 

Notes :

1. Repetitive rating:Pluse width limited by maximum junction temperature

2. Surface Mounted on FR4 board,t≤10 sec.

3. Pulse test : Pulse width≤300μs, duty cycle≤2%.

4. Guaranteed by design, not subject to production.

 

 

 

 

 

SOT-23-6L Package Outline Dimensions

 

 

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    2008

  • Total Annual:

    8000000-10000000

  • Employee Number:

    150~200

  • Ecer Certification:

    Active Member

Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...

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  • Shenzhen Hua Xuan Yang Electronics Co.,Ltd
  • Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
  • https://www.mosfet-powertransistor.com/

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