Packaging Details | Boxed |
Delivery Time | 1 - 2 Weeks |
Payment Terms | L/C T/T Western Union |
Supply Ability | 18,000,000PCS / Per Day |
Product name | Mosfet Power Transistor |
VDSS | 6.0 A |
APPLICATION | Power Management |
FEATURE | Low Gate Charge |
Power mosfet transistor | SOT-23-6L Plastic-Encapsulate |
Place of Origin | ShenZhen China |
Brand Name | Hua Xuan Yang |
Certification | RoHS、SGS |
Model Number | 8205A |
View Detail Information
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Product Specification
Packaging Details | Boxed | Delivery Time | 1 - 2 Weeks |
Payment Terms | L/C T/T Western Union | Supply Ability | 18,000,000PCS / Per Day |
Product name | Mosfet Power Transistor | VDSS | 6.0 A |
APPLICATION | Power Management | FEATURE | Low Gate Charge |
Power mosfet transistor | SOT-23-6L Plastic-Encapsulate | Place of Origin | ShenZhen China |
Brand Name | Hua Xuan Yang | Certification | RoHS、SGS |
Model Number | 8205A | ||
High Light | n channel mosfet transistor ,high current mosfet switch |
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET
General Description
VDSS= V ID= 6.0 A z 20 | G1 6 | D1,D2 5 | G2 4 | |||||
z | RDS(on) < Ω@V = 4.5V 25m GS | |||||||
z | RDS(on) < Ω@V = 2.5V 32m GS | 1 2 3 S1 D1,D2 S2 |
FEATURE
z TrenchFET Power MOSFET
z Excellent RDS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
APPLICATION
z Battery Protection
z Load Switch
z Power Management
Parameter Symbol Test Condition Min Typ Max Unit |
STATIC CHARACTERICTISCS |
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 19 V |
Zero gate voltage drain current IDSS VDS =18V,VGS = 0V 1 µA |
Gate-body leakage current IGSS VGS =±10V, VDS = 0V ±100 nA |
Gate threshold voltage (note 3) VGS(th) VDS =VGS, ID =250µA 0.5 0.9V |
Forward tranconductance (note 3) gFS VDS =5V, ID =4.5A 10 S |
Diode forward voltage (note 3) VSD IS=1.25A, VGS = 0V 1.2 V |
DYNAMIC CHARACTERICTISCS (note4) |
Input Capacitance Ciss 800 pF |
Output Capacitance Coss VDS =8V,VGS =0V,f =1MHz 155 pF |
Reverse Transfer Capacitance Crss 125 pF |
SWITCHING CHARACTERICTISCS (note 4) |
Turn-on delay time td(on) 18 ns |
Turn-on rise time tr VDD=10V,VGS=4V, 5 ns |
Turn-off delay time td(off) ID=1A,RGEN=10Ω 43 ns |
Turn-off fall time tf 20 ns |
Total Gate Charge Qg 11 nC |
Gate-Source Charge Qgs VDS =10V,VGS =4.5V,ID=4A 2.3 nC |
Gate-Drain Charge Qgd 2.5 nC |
Notes :
1. Repetitive rating:Pluse width limited by maximum junction temperature
2. Surface Mounted on FR4 board,t≤10 sec.
3. Pulse test : Pulse width≤300μs, duty cycle≤2%.
4. Guaranteed by design, not subject to production.
SOT-23-6L Package Outline Dimensions
Company Details
Business Type:
Manufacturer
Year Established:
2008
Total Annual:
8000000-10000000
Employee Number:
150~200
Ecer Certification:
Active Member
Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...
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