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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

  • China,Shenzhen ,Guangdong
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China 3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK
China 3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK

  1. China 3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK

3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK

  1. MOQ: Negotiation
  2. Price: Negotiate
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Payment Terms Western Union, L/C, T/T
Supply Ability 10,000PCS/MONTH
Delivery Time 1 - 2 Weeks
Packaging Details Boxed
Model Number: AP4434AGYT-HF
Type: LOGIC ICS
Brand Name: Original brand
Package: DIP/SMD
Condition: New 100% AP4434AGYT-HF
Media Available: Datasheet
Brand Name Hua Xuan Yang
Model Number AP4434AGYT-HF
Certification RoHS、SGS
Place of Origin Shenzhen, China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms Western Union, L/C, T/T Supply Ability 10,000PCS/MONTH
Delivery Time 1 - 2 Weeks Packaging Details Boxed
Model Number: AP4434AGYT-HF Type: LOGIC ICS
Brand Name: Original brand Package: DIP/SMD
Condition: New 100% AP4434AGYT-HF Media Available: Datasheet
Brand Name Hua Xuan Yang Model Number AP4434AGYT-HF
Certification RoHS、SGS Place of Origin Shenzhen, China
High Light 3.13W IGBT Diode Switching Transistor40A IGBT Diode Switching TransistorAP4434AGYT-HF MOSFET IGBT

AP4434AGYT-HF PMPAK(YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips

 

Description

 

AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The PMPAK® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.

 

Absolute Maximum Ratings

 

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Continuous Drain Current3, VGS @ 4.5V 10.8 A
ID@TA=70℃ Continuous Drain Current3, VGS @ 4.5V 8.6 A
IDM Pulsed Drain Current1 40 A
PD@TA=25℃ Total Power Dissipation3 3.13 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

 

hermal Data

 

Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient3 40 ℃/W

 

AP4434AGYT-H

 

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=7A - - 18
VGS=2.5V, ID=4A - - 25
VGS=1.8V, ID=1A - - 34
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.25 - 1 V
gfs Forward Transconductance VDS=10V, ID=7A - 29 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA
Qg Total Gate Charge

ID=7A VDS=10V

VGS=4.5V

- 12.5 20 nC
Qgs Gate-Source Charge - 1.5 - nC
Qgd Gate-Drain ("Miller") Charge - 4.5 - nC
td(on) Turn-on Delay Time

VDS=10V ID=1A RG=3.3Ω

VGS=5V

- 10 - ns
tr Rise Time - 10 - ns
td(off) Turn-off Delay Time - 24 - ns
tf Fall Time - 8 - ns
Ciss Input Capacitance

VG.S=0V VDS=10V

f=1.0MHz

- 800 1280 pF
Coss Output Capacitance - 165 - pF
Crss Reverse Transfer Capacitance - 145 - pF
Rg Gate Resistance f=1.0MHz - 1.5 3 Ω

 

Source-Drain Diode

 

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=2.6A, VGS=0V - - 1.2 V
trr Reverse Recovery Time

IS=7A, VGS=0V,

dI/dt=100A/µs

- 20 - ns
Qrr Reverse Recovery Charge - 10 - nC

 

Notes:

 

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec; 210oC/W when mounted on min. copper pad.

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    2008

  • Total Annual:

    8000000-10000000

  • Employee Number:

    150~200

  • Ecer Certification:

    Active Member

Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching... Shenzhen Huaxuan Yang Electronics Co., Ltd. is a professional manufacturer, exporter and manufacturer of electronic components of Chinese brands. The main products are semiconductor devices such as MOS transistors and diodes. Our products are mainly used for wireless charging, charger, switching...

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Get in touch with us

  • Reach Us
  • Shenzhen Hua Xuan Yang Electronics Co.,Ltd
  • Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province
  • https://www.mosfet-powertransistor.com/

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