TO-220-3L Pack Logic Level Transistor / High Voltage Transistor 100V

Product Specification

TO-220-3L Pack Logic Level Transistor / High Voltage Transistor 100V

Logic Level Transistor applications

Switch, buck and synchronous rectification

Uninterruptible Power Supplies (UPS)

Small motor control

Switch Mode Power Supplies (SMPS)

Power-Over-Ethernet (PoE)

Solar inverters

Automotive applications

Logic Level Transistor Description:

The AP50N10P uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.

Logic Level Transistor Features

VDS = 100V ID =50 A
RDS(ON) < 22mΩ @ VGS=10V

Package Marking and Ordering Information

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Electrical Characteristics (T J=25℃, unless otherwise noted)

3.The EAS data shows Max. rating . The test condition is VDS=25V,VGS=10V,L=0.1mH,IAS =41A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as IDand IDM, in real applications , should be limited by total power dissipation.

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

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