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Reasunos Semiconductor Technology Co., Ltd.

  • China,Dongguan ,Guangdong
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China 650V 50A High Power IGBT Multifunctional High Speed For Energy Storage
China 650V 50A High Power IGBT Multifunctional High Speed For Energy Storage

  1. China 650V 50A High Power IGBT Multifunctional High Speed For Energy Storage

650V 50A High Power IGBT Multifunctional High Speed For Energy Storage

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  2. Price: Confirm price based on product
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Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons
Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW)
Supply Ability 5KK/month
Application frequency 60KHz
Current density 400A/c㎡
Device Type IGBT
Product name High Power IGBT
Switching speed Faster Switching Speed
Power High Power
Application OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, Energy Storage, Etc
Advantages Narrow Mesa Design, More Optimized Groove Combination Design, Higher Reliability Design, And Strict Reference To Vehicle Specification Requirements.
Brand Name REASUNOS
Place of Origin Guangdong, CN

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  1. Product Details
  2. Company Details

Product Specification

Packaging Details Dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons Delivery Time 2-30 days (Depends on Total Quantity)
Payment Terms 100% T/T in Advance(EXW) Supply Ability 5KK/month
Application frequency 60KHz Current density 400A/c㎡
Device Type IGBT Product name High Power IGBT
Switching speed Faster Switching Speed Power High Power
Application OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, Energy Storage, Etc Advantages Narrow Mesa Design, More Optimized Groove Combination Design, Higher Reliability Design, And Strict Reference To Vehicle Specification Requirements.
Brand Name REASUNOS Place of Origin Guangdong, CN
High Light 650V High Power IGBT50A High Power IGBTMultifunctional High Speed IGBT

High Voltage IGBT with Faster Switching Speed and High Power

Product Description:

High Power IGBT is an insulated gate bipolar transistor (IGBT) inverter that provides higher power and switching speed than other IGBTs. It is designed with a narrow mesa design, more optimized groove combination design, higher reliability design, and strict reference to vehicle specification requirements. It has a faster switching speed and a high power output of up to 60KHz. With its higher power and reliable performance, it is an ideal choice for applications that require high power and faster switching speed.

High Power IGBT offers many advantages such as its narrow mesa design, optimized groove combination design, and higher reliability design. These features make it more reliable and suitable for applications such as power supplies, motor drives, and other high power applications. It also has a strict reference to vehicle specification requirements so that it can meet the needs of customers. In addition, the faster switching speed of High Power IGBT makes it an ideal choice for applications that require high power and fast switching speed.

 

Technical Parameters:

Device Type High Power IGBT
Product Name High Power IGBT
Application OBC, Charging Pile, Welding Machine, Switching Power Supply, Photovoltaic Inverter, Energy Storage, Etc
Current density 400A/c㎡
Power High Power
Switching speed Faster Switching Speed
Application frequency 60KHz
Advantages Narrow Mesa Design, More Optimized Groove Combination Design, Higher Reliability Design, And Strict Reference To Vehicle Specification Requirements.
 

Applications:

REASUNOS High Power IGBT is a high power gate bipolar transistor that provides superior performance in high voltage applications. It is manufactured with advanced technology in Guangdong, China and comes with dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons. The price will be confirmed according to the quantity. It has a supply ability of 5KK/month and delivery time of 2-30 days, depending on the total quantity. Payment terms are 100% T/T in Advance (EXW). This device type is suitable for OBC, charging pile, welding machine, switching power supply, photovoltaic inverter, energy storage, etc. It has a current density of 400A/c㎡ and application frequency of 60KHz.

 

Support and Services:

High Power IGBT Technical Support and Service

We offer comprehensive technical support and service for our High Power IGBT products. Our team of experts will help you to choose the right IGBT products for your application, provide assistance with design and installation, and answer any questions you may have.

We offer the following technical support and service for our High Power IGBT products:

  • Product selection and specifications
  • Design and installation assistance
  • Technical support and troubleshooting
  • Product training and seminars
  • Product updates and upgrades
  • On-site maintenance and repairs

Our team of experts is available to provide you with the best possible technical support and service for your High Power IGBT products. Please don't hesitate to contact us with any questions or concerns you may have.

 

Packing and Shipping:

Packaging and Shipping

High Power IGBTs are packaged in anti-static, moisture proof, medium-high strength boxes with sufficient cushioning material to protect the products from any physical damage during transportation. Boxes are labeled with product information and are placed in strong wooden pallets. The pallets are then loaded onto the truck for transportation.

The shipping process is carried out with utmost care and safety to ensure that the product reaches its destination in perfect condition.

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FAQ:

Q: What is High Power IGBT?
A: High Power IGBT is a type of Insulated Gate Bipolar Transistor that is characterized by high input impedance, high switching speed, and high efficiency. It is used in a variety of applications, including high-power motor control, power conversion, and power amplifiers.
Q: What are the features of High Power IGBT?
A: High Power IGBT has features such as low on-state voltage drop, high input impedance, high switching speed, and high efficiency. It is also suitable for applications that require high power levels and high current.
Q: What is the brand name of High Power IGBT?
A: The brand name of High Power IGBT is REASUNOS.
Q: Where is High Power IGBT made?
A: High Power IGBT is made in Guangdong, China.
Q: What is the packaging method of High Power IGBT?
A: High Power IGBT is packaged in dustproof, waterproof, and anti-static tubular packaging, placed inside a cardboard box in cartons.

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Exporter

  • Year Established:

    2007

  • Total Annual:

    10000000-50000000

  • Employee Number:

    100~200

  • Ecer Certification:

    Verified Supplier

         Founded in 2007, Reasunos is a high-technology enterprise focusing on R&D and sales of MOSFET and power IC, it is dedicated to providing the entire power semiconductor solutions for global markets. Reasunos offers high quality products including SiC MOSFET, SiC ...          Founded in 2007, Reasunos is a high-technology enterprise focusing on R&D and sales of MOSFET and power IC, it is dedicated to providing the entire power semiconductor solutions for global markets. Reasunos offers high quality products including SiC MOSFET, SiC ...

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  • Reasunos Semiconductor Technology Co., Ltd.
  • 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province
  • https://www.mosfet-power.com/

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