Payment Terms | T/T |
Supply Ability | 5000000 PCS/Month |
Delivery Time | 30 Days |
Packaging Details | Boxes |
Material | GaN |
Type | GaN-FS-10, GaN-FS-15 |
Orientation | C-axis(0001) ± 0.5° |
TTV | ≤15 µm |
BOW | ≤20 µm |
Carrier Concentration | >5x1017/cm3 |
Typical thickness (mm) | N-type, Semi-Insulating |
Resistivity(@300K) | < 0.5 Ω•cm, >106 Ω•cm |
Usable Surface Area | > 90% |
Brand Name | JOPTEC |
Place of Origin | HEFEI, CHINA |
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Gadolinium Gallium Garnet GGG Wafers And Substrates
Product Specification
Payment Terms | T/T | Supply Ability | 5000000 PCS/Month |
Delivery Time | 30 Days | Packaging Details | Boxes |
Material | GaN | Type | GaN-FS-10, GaN-FS-15 |
Orientation | C-axis(0001) ± 0.5° | TTV | ≤15 µm |
BOW | ≤20 µm | Carrier Concentration | >5x1017/cm3 |
Typical thickness (mm) | N-type, Semi-Insulating | Resistivity(@300K) | < 0.5 Ω•cm, >106 Ω•cm |
Usable Surface Area | > 90% | Brand Name | JOPTEC |
Place of Origin | HEFEI, CHINA |
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices. Based on the stable physical and chemical properties, GaN is suitable for LED applications (blue, green, UV-light), ultraviolet detectors and optoelectronic high-power and high-frequency devices.
Specification | ||
Type | GaN-FS-10 | GaN-FS-15 |
Size | 10.0mm×10.5mm | 14.0mm×15.0mm |
Thickness |
Rank 300, Rank 350, Rank 400 |
300 ± 25 µm, 350 ± 25 µm, 400 ± 25 µm |
Orientation | C-axis(0001) ± 0.5° | |
TTV | ≤15 µm | |
BOW | ≤20 µm | |
Carrier Concentration | >5x1017/cm3 | / |
Conduction Type | N-type | Semi-Insulating |
Resistivity(@300K) | < 0.5 Ω•cm | >106 Ω•cm |
Dislocation Density | Less than 5x106 cm-2 | |
Useable Surface Area | > 90% | |
Polishing |
Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground |
|
Package | Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere. |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler
Year Established:
1988
Total Annual:
50000000-100000000
Employee Number:
500~1000
Ecer Certification:
Verified Supplier
Founded in 1988 in Hefei, JOPTEC is a global leader in R&D and manufacturing of hermetic metal-glass packages for hybrid integrated circuits, high power laser, optical communication, infrared detector and other optoelectronic devices. With the continuous investment in new technologies and facili... Founded in 1988 in Hefei, JOPTEC is a global leader in R&D and manufacturing of hermetic metal-glass packages for hybrid integrated circuits, high power laser, optical communication, infrared detector and other optoelectronic devices. With the continuous investment in new technologies and facili...
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