Payment Terms | T/T, Western Union, MoneyGram, PayPay |
Supply Ability | 12000pcs Per Month |
Delivery Time | 3-5work days |
Packaging Details | 240Pcs |
Type | Trenchstop IGBT3 |
Description | Low Loss DuoPack 600V 20A |
Power - Max | 166 WW |
Mounting Style | Through Hole |
Shipping by | DHL\UPS\Fedex |
Unit Weight | 1.340411 oz |
Brand Name | Infineon |
Model Number | IKW20N60T |
Place of Origin | Original Factory |
View Detail Information
Explore similar products
STGW80H65DFB Insulated Gate Bipolar Transistor IGBT Transistor 650V 80A 469W
PS21765 Ipm Intelligent Power Module 20A 600V DIP-IPM Small Motor Control
FGH20N60SFD Field Stop IGBT Power Transistors 600V 20A 165W Through Hole
IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
Product Specification
Payment Terms | T/T, Western Union, MoneyGram, PayPay | Supply Ability | 12000pcs Per Month |
Delivery Time | 3-5work days | Packaging Details | 240Pcs |
Type | Trenchstop IGBT3 | Description | Low Loss DuoPack 600V 20A |
Power - Max | 166 WW | Mounting Style | Through Hole |
Shipping by | DHL\UPS\Fedex | Unit Weight | 1.340411 oz |
Brand Name | Infineon | Model Number | IKW20N60T |
Place of Origin | Original Factory | ||
High Light | IGBT Power Transistor IKW20N60T ,Low Loss IGBT Power Transistor ,IKW20N60T insulated gate transistor |
IKW20N60T IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor
Description
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery
anti-parallel Emitter Controlled HE diode
Features
Lowest VCEsat drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Applications
Home appliances
Motor control and drives
Uninterruptible Power Supplies (UPS)
Product Attribute | Attribute Value |
---|---|
Product Category: | IGBT Transistors |
Si | |
TO-247-3 | |
Single | |
600 V | |
1.5 V | |
- 20 V, + 20 V | |
41 A | |
166 W | |
- 40 C | |
+ 175 C | |
Tube | |
Gate-Emitter Leakage Current: | 100 nA |
Height: | 20.95 mm |
Length: | 15.9 mm |
Product Type: | IGBT Transistors |
Shipping | Delivery period | |
Shipping rates |
After confirming the order, we will evaluate the shipping cost based on the weight of the goods
| |
Shipping option |
We provide DHL, FedEx, EMS, SF Express, and Registered Air Mail international shipping.
| |
Shipping tracking |
We will notify you by email with tracking number once order is shipped.
| |
Returning | Returning |
Returns are normally accepted when completed within 30 days from date of shipment.Parts should be unused and in original packaging.Customer has to take charge for the shipping.
|
Warranty |
All Retechip purchases come with a 30-day money-back return policy, This warranty shall not apply to any item where defects have been caused by improper customer assembly, failure by customer to follow instructions, product modification, negligent or improper operation
| |
Ordering | | |
Company Details
Business Type:
Distributor/Wholesaler
Year Established:
2013
Total Annual:
5000000-1000000
Employee Number:
100~150
Ecer Certification:
Verified Supplier
Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics,... Shenzhen Retechip® Electronic Technology Co., Ltd. was established in 2013, specializing in electronic components distribution business.The products are widely used in communication equipment, power supply, medical electronics, automotive electronics, digital electronics, industrial electronics,...
Get in touch with us
Leave a Message, we will call you back quickly!