Stable 85MHZ Flash Memory IC 16MBIT SPI 8SOIC AT45DB161E-SHD-T

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Payment Terms	T/T
Supply Ability	In stock
Delivery Time	3-5 work days
Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH
Memory Size	16Mbit
Memory Organization	528 Bytes x 4096 pages
Memory Interface	SPI
Clock Frequency	85 MHz
Write Cycle Time - Word, Page	8µs, 4ms
Access Time	-
Voltage - Supply	2.5V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TC)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.209", 5.30mm Width)
Supplier Device Package	8-SOIC
Brand Name	Renesas Design Germany GmbH
Model Number	AT45DB161E-SHD-T

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Product Specification


Payment Terms	T/T	Supply Ability	In stock
Delivery Time	3-5 work days	Packaging Details	anti-static bag & cardboard box
Memory Type	Non-Volatile	Memory Format	FLASH
Technology	FLASH	Memory Size	16Mbit
Memory Organization	528 Bytes x 4096 pages	Memory Interface	SPI
Clock Frequency	85 MHz	Write Cycle Time - Word, Page	8µs, 4ms
Access Time	-	Voltage - Supply	2.5V ~ 3.6V
Operating Temperature	-40°C ~ 85°C (TC)	Mounting Type	Surface Mount
Package / Case	8-SOIC (0.209", 5.30mm Width)	Supplier Device Package	8-SOIC
Brand Name	Renesas Design Germany GmbH	Model Number	AT45DB161E-SHD-T
High Light	Stable Flash Memory IC ，85MHZ Flash Memory IC ，AT45DB161E-SHD-T

AT45DB161E-SHD-T IC FLASH 16MBIT SPI 85MHZ 8SOIC Renesas Design Germany GmbH

Product Details

Description

The Atmel AT45DB161E is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications. The AT45DB161E also supports RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pademory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.

Features

 Single 2.3V - 3.6V or 2.5V - 3.6V supply
 Serial Peripheral Interface (SPI) compatible
 Supports SPI modes 0 and 3
 Supports Atmel® RapidS™ operation
 Continuous Read capability through entire array
 Up to 85MHz
 Low-power Read option up to 10MHz
 Clock-to-output time (tV) of 6ns maximum
 User configurable page size
 512 bytes per page
 528 bytes per page (default)
 Page size can be factory pre-configured for 512 bytes
 Two fully independent SRAM data buffers (512/528 bytes)
 Allows receiving data while reprogramming the Main Memory Array
 Flexible programming options
 Byte/Page program (1 to 512/528 bytes) directly into main memory
 Buffer Write
 Buffer to Main Memory Page Program
 Flexible Erase options
 Page Erase (512/528 bytes)
 Block Erase (4KB)
 Sector Erase (128KB)
 Chip Erase (16-Mbits)
 Program and Erase Suspend/Resume
 Advanced hardware and software data protection features
 Individual sector protection
 Individual sector lockdown to make any sector permanently read-only
 128-byte, One-Time Programmable (OTP) Security Register
 64 bytes factory programmed with a unique identifier
 64 bytes user programmable
 Software controlled reset
 JEDEC Standard Manufacturer and Device ID Read
 Low-power dissipation
 500nA Ultra-Deep Power-Down current (typical)
 3μA Deep Power-Down current (typical)
 25μA Standby current (typical)
 11mA Active Read current (typical)
 Endurance: 100,000 program/erase cycles per page minimum
 Data retention: 20 years
 Complies with full industrial temperature range
 Green (Pb/Halide-free/RoHS compliant) packaging options
 8-lead SOIC (0.150" wide)
 8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
 9-ball Chip-scale BGA (5 x 5 x 1.2mm)

Specifications

Attribute	Attribute Value
Manufacturer	ADESTO
Product Category	Memory ICs
Series	AT45DB
Packaging	Tube
Unit-Weight	0.019048 oz
Mounting-Style	SMD/SMT
Operating-Temperature-Range	- 40 C to + 85 C
Package-Case	8-SOIC (0.209", 5.30mm Width)
Operating-Temperature	-40°C ~ 85°C (TC)
Interface	SPI, RapidS
Voltage-Supply	2.5 V ~ 3.6 V
Supplier-Device-Package	8-SOIC
Memory Capacity	16M (4096 pages x 528 bytes)
Memory-Type	DataFLASH
Speed	85MHz
Architecture	Chip Erase
Format-Memory	FLASH
Interface-Type	SPI
Organization	2 M x 8
Supply-Current-Max	22 mA
Data-Bus-Width	8 bit
Supply-Voltage-Max	3.6 V
Supply-Voltage-Min	2.5 V
Package-Case	SOIC-8
Maximum-Clock-Frequency	70 MHz
Timing-Type	Synchronous

Functional compatible componentForm,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
SST25VF016B-50-4I-QAF Memory	16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8	Microchip Technology Inc	AT45DB161E-SHD-T vs SST25VF016B-50-4I-QAF
SST26VF016B-104I/SM Memory	IC FLASH 2.7V PROM, Programmable ROM	Microchip Technology Inc	AT45DB161E-SHD-T vs SST26VF016B-104I/SM
SST25VF016B-75-4I-S2AF Memory	16M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, EIAJ, SOIC-8	Microchip Technology Inc	AT45DB161E-SHD-T vs SST25VF016B-75-4I-S2AF
AT45DB161E-SSHD-T Memory	Flash, 16MX1, PDSO8, 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8	Adesto Technologies Corporation	AT45DB161E-SHD-T vs AT45DB161E-SSHD-T
AT45DB161E-SHD-B Memory	Flash, 16MX1, PDSO8, 0.208 INCH, GREEN, PLASTIC, SOIC-8	Adesto Technologies Corporation	AT45DB161E-SHD-T vs AT45DB161E-SHD-B
AT45DB161E-SSHD-B Memory	Flash, 16MX1, PDSO8, 0.150 INCH, GREEN, PLASTIC, MS-012AA, SOIC-8	Adesto Technologies Corporation	AT45DB161E-SHD-T vs AT45DB161E-SSHD-B
AT45DB161D-SU Memory	Flash, 16MX1, PDSO8, 0.209 INCH, GREEN, PLASTIC, EIAJ, SOIC-8	Atmel Corporation	AT45DB161E-SHD-T vs AT45DB161D-SU
SST25VF016B-50-4I-S2AF Memory	16M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, EIAJ, SOIC-8	Microchip Technology Inc	AT45DB161E-SHD-T vs SST25VF016B-50-4I-S2AF
SST25VF016B-50-4C-S2AF Memory	16M X 1 FLASH 2.7V PROM, PDSO8, 5.20 X 8 MM, ROHS COMPLIANT, EIAJ, SOIC-8	Microchip Technology Inc	AT45DB161E-SHD-T vs SST25VF016B-50-4C-S2AF

Descriptions

FLASH Memory IC 16Mb (528 Bytes x 4096 pages) SPI 85MHz 8-SOIC

NOR Flash Serial-SPI 3.3V 16M-bit 6ns 8-Pin SOIC EIAJ T/R

Flash Memory 16M 2.5-3.6V 85Mhz Data Flash

Company Details

Bronze Gleitlager

Bronze Sleeve Bushings

and

Graphite Plugged Bushings

from Quality China Factory

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Business Type:

Distributor/Wholesaler,Trading Company 
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Year Established:

2005 
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Total Annual:

1000000-3000000
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Employee Number:

100~150 
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Ecer Certification：

Verified Supplier 

Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass... Our company, founded in 2005, has built long-term partnerships with numerous high-quality suppliers worldwide. We specialize in providing customers with new and original products. To ensure quality, our technicians rigorously test all products before shipment, offering customers the strongest ass...

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Sanhuang electronics (Hong Kong) Co., Limited
No. 2520, 25th Floor, Block A, New Asia Guoli Building, Huaqiang North Street, Shenzhen, China
https://www.integratedcircuit-ic.com/

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