Payment Terms | T/T, L/C, Western Union |
Supply Ability | |
Packaging Details | Original Factory |
Delivery Time | 5-8 work days |
FET Type | N-Channel |
Drain to Source Voltage (Vdss) | 1200 V |
Vgs (Max) | +20V, -5V |
Power Dissipation (Max) | 455W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Brand Name | Original Factory |
Model Number | IMZA120R014M1HXKSA1 |
Certification | Lead free / RoHS Compliant |
Place of Origin | CN |
View Detail Information
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Product Specification
Payment Terms | T/T, L/C, Western Union | Supply Ability | |
Packaging Details | Original Factory | Delivery Time | 5-8 work days |
FET Type | N-Channel | Drain to Source Voltage (Vdss) | 1200 V |
Vgs (Max) | +20V, -5V | Power Dissipation (Max) | 455W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
Package / Case | TO-247-4 | Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Brand Name | Original Factory | Model Number | IMZA120R014M1HXKSA1 |
Certification | Lead free / RoHS Compliant | Place of Origin | CN |
High Light | IMZA120R014M1HXKSA1 GaN IC ,GaN IC 1200V ,Gan Fet Transistor 14 mohm |
Transistors IMZA120R014M1HXKSA1 1200V 14mΩ SiC Trench MOSFET TO247 package
Description
The CoolSiC™ 1200 V, 14 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state char4acteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.
Summary of Features
FET Type: | N-Channel | Drain To Source Voltage (Vdss): | 1200 V |
---|---|---|---|
Vgs (Max): | +20V, -5V | Power Dissipation (Max): | 455W (Tc) |
Package / Case: | TO-247-4 | Drive Voltage (Max Rds On, Min Rds On): | 15V, 18V |
Benefits
Applications
Diagrams
FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Company Details
Business Type:
Distributor/Wholesaler
Total Annual:
1000000-2000000
Employee Number:
20~50
Ecer Certification:
Verified Supplier
Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996, Mingjiada has successively established branches in Hong Kong, Japan, Russia, and Taiwan. We have passed certifications carried out in acco... Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996, Mingjiada has successively established branches in Hong Kong, Japan, Russia, and Taiwan. We have passed certifications carried out in acco...
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