Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability | 10000 pieces per month |
Delivery Time | 3 working days |
Packaging Details | Strong wooden box for Global shipping |
Application | integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells |
Diameter | Ø 4"/ Ø 6" / Ø 8" |
Device Thickness | 2 um ~ 300 um |
Coating | Oxide and nitride can be supplied on both sides of SOI wafer |
Brand Name | ZG |
Model Number | MS |
Certification | CE |
Place of Origin | CHINA |
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Product Specification
Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram | Supply Ability | 10000 pieces per month |
Delivery Time | 3 working days | Packaging Details | Strong wooden box for Global shipping |
Application | integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells | Diameter | Ø 4"/ Ø 6" / Ø 8" |
Device Thickness | 2 um ~ 300 um | Coating | Oxide and nitride can be supplied on both sides of SOI wafer |
Brand Name | ZG | Model Number | MS |
Certification | CE | Place of Origin | CHINA |
High Light | SOI Wafer Technical Ceramic Parts ,2um SOI Wafer ,300um SOI Wafer |
SOI Wafer ( Silicon-on-Insulator )
We provides high quality SOI wafer ( Silicon-on-Insulator ) for a varity of application including MEMS , Power device , Pressure sensors and CMOS integrated circuit fabrication . SOI wafer provide a potential solution for high speed and low power consumption device and has been widely acknowledged as a new solution for high voltage and RF components. SOI wafer is a sandwich structure including a device layer ( active layer ) on top , a buried oxide layer ( insulating SiO2 layer ) in the middle , and a handle wafer ( bulk silicon ) in the bottom . SOI wafers are produced by using SIMOX and wafer bonding technology to achieve thinner and precise device layer and ensure the requirement of thickness uniformity and low defect density . We can provide SOI wafer in diameter 4" and 8 " with flexible thickness and wide resistivity range to meet your unique SOI requirements . Contact us for further SOI product informations .
SOI Wafer Application
High-speed ICs | High-temperature ICs |
Low-power ICs | Low-voltage ICs |
Microwave components | Power device |
MEMS | Semiconductor |
Product Specification
Method | Fusion bonding |
---|---|
Diameter | Ø 4"/ Ø 6" / Ø 8" |
Device thickness | 2 um ~ 300 um |
Tolerance | +/- 0.5 um ~ 2 um |
Orientation | <100> / <111> / <110> or others |
Conductivity | P - type / N - type / Intrinsic |
Dopant | Boron / Phosphorous / Antimony / Arsenic |
Resistivity | 0.001 ~ 100000 ohm-cm |
Oxide thickness | 500A ~ 4 um |
Tolerance | +/- 5% |
Handle wafer | >= 300 um |
Surface | Double sides polished |
Coating | Oxide and nitride can be supplied on both sides of SOI wafer |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Importer,Exporter
Year Established:
2007
Total Annual:
5000000-8000000
Employee Number:
50~100
Ecer Certification:
Verified Supplier
Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic... Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic...
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