HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability | 10000 pieces per month |
| Delivery Time | 3 working days |
| Packaging Details | Strong wooden box for Global shipping |
| Application | integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells |
| Diameter | Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12" |
| Oxide Thickness | 100 A ~ 6 um |
| Grade | Prime / Test / Dummy grade |
| Brand Name | ZG |
| Model Number | MS |
| Certification | CE |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram | Supply Ability | 10000 pieces per month |
| Delivery Time | 3 working days | Packaging Details | Strong wooden box for Global shipping |
| Application | integrated circuits , detector / sensor device , MEMS fabrication, opto-electronic components, and solar cells | Diameter | Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12" |
| Oxide Thickness | 100 A ~ 6 um | Grade | Prime / Test / Dummy grade |
| Brand Name | ZG | Model Number | MS |
| Certification | CE | Place of Origin | CHINA |
| High Light | Higher Uniformity Thermal Oxide Wafer ，Thermal Oxide Wafer as Insulator ，2" thermal oxide silicon wafer | ||
Thermal Oxide Wafer, higher uniformity, and higher dielectric strength , excellent dielectric layer as an insulator
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at elevated temperature in the presence of an oxidant , the process is called thermal oxidation. Thermal oxide is normally grown in a horizontal tube furnace , at temperature range from 900°C ~ 1200°C , using either a "Wet" or "Dry" growth method . Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator . In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics . we provides thermal oxide wafer in diameter from 2" to 12 " , we always choose prime grade and defect free silicon wafer as substrate for growing high uniformity thermal oxide layer to meet your specific requirements . Contact us for further information on price & delivery time .
Thermal Oxide Capability
Typically after thermal oxidation process , both front side and back side of silicon wafer have oxide layer . In case only one side oxide layer is required , we can remove back oxide and offer one side thermal oxide wafer for you .
| Oxide thickness range | Oxidation technique | Within wafer uniformity | Wafer to wafer uniformity | Surface processed |
|---|---|---|---|---|
| 100 Å ~ 500Å | dry oxide | +/- 5% | +/- 10% | both sides |
| 600 Å ~ 1000Å | dry oxide | +/- 5% | +/- 10% | both sides |
| 100 nm ~ 300 nm | wet oxide | +/- 5% | +/- 10% | both sides |
| 400 nm ~ 1000 nm | wet oxide | +/- 3% | +/- 5% | both sides |
| 1 um ~ 2 um | wet oxide | +/- 3% | +/- 5% | both sides |
| 3 um ~ 4 um | wet oxide | +/- 3% | +/- 5% | both sides |
| 5 um ~ 6 um | wet oxide | +/- 3% | +/- 5% | both sides |
Thermal Oxide Wafer Application
| 100 A | Tunneling Gates |
| 150 A ~ 500 A | Gate Oxides |
| 200 A ~ 500 A | LOCOS Pad Oxide |
| 2000 A ~ 5000 A | Masking Oxides |
| 3000 A ~ 10000 A | Field Oxides |
Product Specification
| Qxidation technique | Wet oxidation or Dry oxidation |
|---|---|
| Diameter | Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12" |
| Oxide thickness | 100 A ~ 6 um |
| Tolerance | +/- 5% |
| Surface | Single side or double sides oxide layer |
| Furnace | Horizontal tube furnace |
| Gase | Hydrogen and Oxygen gases |
| Temperature | 900 C ° - 1200 C ° |
| Refractive index | 1.456 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Importer,Exporter
Year Established:
2007
Total Annual:
5000000-8000000
Employee Number:
50~100
Ecer Certification：
Verified Supplier
Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic... Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic...
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