Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability | 10000 pieces per month |
Delivery Time | 3 working days |
Packaging Details | Strong wooden box for Global shipping |
Application | making LD , LED , microwave circuit and solar cell applications |
Diameter | Ø 2" / Ø 3" / Ø 4" |
Thickness | 350 um ~ 625 um |
Grade | Epi polished grade / mechanical grade |
Brand Name | ZG |
Model Number | MS |
Certification | CE |
Place of Origin | CHINA |
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Product Specification
Payment Terms | L/C, D/A, D/P, T/T, Western Union, MoneyGram | Supply Ability | 10000 pieces per month |
Delivery Time | 3 working days | Packaging Details | Strong wooden box for Global shipping |
Application | making LD , LED , microwave circuit and solar cell applications | Diameter | Ø 2" / Ø 3" / Ø 4" |
Thickness | 350 um ~ 625 um | Grade | Epi polished grade / mechanical grade |
Brand Name | ZG | Model Number | MS |
Certification | CE | Place of Origin | CHINA |
High Light | Polycrystalline GaAs Wafer ,Single Crystal Gallium Arsenide ,Gallium Arsenide For LD LED |
Single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for making LD , LED , microwave circuit, solar cell
We provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) to opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , in diameter range from 2" to 4 ". We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical propertirs and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafers , both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications , please contact us for more product information .
GaAs Wafer Feature and Application
Feature | Application field |
---|---|
High electron mobility | Light emitting diodes |
High frequency | Laser diodes |
High conversion efficiency | Photovoltaic devices |
Low power consumption | High Electron Mobility Transistor |
Direct band gap | Heterojunction Bipolar Transistor |
Product Specification
Growth | LEC / VGF |
---|---|
Diameter | Ø 2" / Ø 3" / Ø 4" |
Thickness | 350 um ~ 625 um |
Orientation | <100> / <111> / <110> or others |
Conductivity | P - type / N - type / Semi-insulating |
Dopant | Zn / Si / undoped |
Surface | One side polished or two sides polished |
Concentration | 1E17 ~ 5E19 cm-3 |
TTV | <= 10 um |
Bow / Warp | <= 20 um |
Grade | Epi polished grade / mechanical grade |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Importer,Exporter
Year Established:
2007
Total Annual:
5000000-8000000
Employee Number:
50~100
Ecer Certification:
Verified Supplier
Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic... Henan ZG Industrial Products Co. Ltd. was founded by specialists of leading industrial institutes in Zhengzhou city, China in 2007. Our company manufactures, complex develops, supplies, introduces and upgrades products from technical ceramics, heating elements and graphite. We provide servic...
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