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BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

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China PSHI 512F33A
China PSHI 512F33A

  1. China PSHI 512F33A

PSHI 512F33A

  1. MOQ: 1 pcs
  2. Price:
  3. Get Latest Price
Place of Origin China
Brand Name power-sem
Model Number PSHI 512F33A

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  1. Product Details
  2. Company Details

Product Specification

Place of Origin China Brand Name power-sem
Model Number PSHI 512F33A
High Light IGBT driverdriver driver core

1.feature

● ASIC single IGBT driver
● Suitable for multi-level all 3300V HV-IGBTs
● Short circuit and over current protection by VCEsat monitoring
● Supply VGE undervoltage protection (>-7.5V,<+12.5V)
● Error “soft turn-off”
● Dynamic “soft turn-off”+active clamping
● Internal isolated DC/DC power supply
● Isolation voltage 8kVac ● 1min
● ±40A peak current output
● IGBT gate drive voltage +15V/-10V
● 500ns signal conversion time
● 30ns error signal feedback time
● 400ns narrow pulse inhibit
● Max. working frequency 10kHz
● Fiber-optic interface
● IGBT turn on/off status indication
● Clearance distance from primary side to secondary side is 30mm
2.parameter
PSHI 512F33A

Absolute Maximum Ratings(Ta=25℃)

Symbol

Term

Values

Unit

VS MAX.

Max. supply voltage primary

+16

V

IS MAX.

Max. supply current primary

350

mA

PDC/DC

Total power of DC/DC isolation power output

5

W

IO

Max. logic signal output current

10

mA

IoutAV

Output average current per channel

140

mA

IoutPEAK

Output peak current per channel

±40

A

VCES

IGBT collector-emitter voltage

3300

V

Visol IO

Isolation voltage IN-OUT(1 minute. AC)

8

kV

RGon/off min

Minimal Rgon/Rgoff

0.65

Ω

Qout/pulse

Minimal charge per pulse

±50

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

fSW max

Max. working frequency

10

kHz

Top

Operating temperature

-45...+85

Tstg.

Storage temperature

-45...+85

Electrical Characteristics *(Ta=25℃)

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

VS

Supply voltage primary

14.5

15

15.5

15

V

IS

No-load current primary fSW=0

fSW=8kHz

110

125

mA

VG(on)

Turn-on gate voltage

+15

V

VG(off)

Turn-off gate voltage

-10

V

VG(onTH)

IGBT turn-on threshold voltage

+13.5

V

VG(offTH)

IGBT turn-off threshold voltage

-4.5

V

td(on)IO

IN-OUT turn-on delay time

500

ns

td(off)IO

IN-OUT turn-off delay time

500

ns

td(err)

Error signal return delay time

VCEerror happen-error signal output

30

ns

tmd

Narrow pulse restrained

400

ns

tpReset

error automatic reset time

30

μs

tp(err)

Error signal pulse width

30

μs

VCEstat

Reference voltage for VCEmonitoring

20

50

60

51

V

CPS

Primary to secondary capacitance

8

pf

*Electrical Characteristics do not contain fiber-optic link and photoelectric conversion parameters(HFBR-2521/HFBR-1521)

3.application

● 3-level and multi-level applications
● Traction
● SVG
● Medium-voltage converter
● Mine inverter
● Wind-power converter
● Smart power grids
● Active power filter
























Company Details

Bronze Gleitlager

,

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Exporter,Trading Company,Seller

  • Year Established:

    2001

  • Ecer Certification:

    Active Member

Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ... Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ...

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Get in touch with us

  • Reach Us
  • BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
  • 1/F, No.23 Huoju Street, ChangpingPark, Beijing, China,102200
  • https://igbtdriver-net.ecer.com/

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