BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
| Place of Origin | China |
| Brand Name | power-sem |
| Model Number | PSHI 420-17/F |
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Product Specification
| Place of Origin | China | Brand Name | power-sem |
| Model Number | PSHI 420-17/F | ||
| High Light | IGBT driver ， driver core | ||
●Output power PDC/DC：2×2W
●Output average current per channel IoutAV：80mA
●Output peak current per channel IoutPEAK：±15A
●Minimal charge per pulse Qout/pulse：±10μC
●Short circuit and over current protection by VCEsatmonitoring
●Supply undervoltage protection (<12.5V)
●Error "soft turn-off" and error memory
●Integrated interlock function, dead time adjustable
Absolute Maximum Ratings(Ta=25℃)
Symbol | Term | Values | Unit |
VS MAX. | Max. supply voltage primary | +16 | V |
IS MAX. | Max. supply current primary | 300 | mA |
PDC/DC | Total power of DC/DC isolation power output | 4 | W |
Vin | Max. PWM input level Vin A; Vin B | VS+0.5 | V |
ViH | Max. logic signal input voltage (Mode select;reset signal;external error) | VS+0.5 | V |
IOC | Max. logic signal output currect (Open-collector output current) | 10 | mA |
IoutAV | Output average current per channel | 80 | mA |
IoutPEAK | Output peak current per channel | ±15 | A |
VCES | IGBT collector-emitter voltage | 1700 | V |
Visol IO | Isolation voltage IN-OUT(10 sec.AC) | 5000 | V |
Visol AB | Isolation voltage OUT A-OUT B(10 sec.AC) | 4000 | V |
RGon/off min | Minimal Rgon/Rgoff | 1.6 | Ω |
Qout/pulse | Charge per pulse | ±10 | μC |
dv/dt | Rate of rise and fall of voltage | 75 | kV/μs |
fSWmax | Max. working frequency | 100 | kHz |
Top | Operating temperature | -40...+85 | ℃ |
Tstg. | Storage temperatature | -45...+85 | ℃ |
Electrical Characteristics(Ta=25℃)
Symbol | Term | Parameter | Unit | |||
Min. | Typ. | Max. | Rec. | |||
VS | Supply voltage primary | 14.5 | 15 | 15.5 | 15 | V |
IS | No-load currect primary fSW=0kHz fSW=20kHz fSW=100kHz | - 75 95 125 | mA | |||
VIT+ | Input high level: 15V level 5V level | -- 12 3.2 | V | |||
VIT- | Input low level: 15V level 5V level | -- 4.5 1.9 | V | |||
Rin | Input resistance | 33 | kΩ | |||
VG(on) | Turn-on gate voltage | +15 | V | |||
VG(off) | Turn-off gate voltage | -9 | V | |||
td(on)IO | IN-OUT turn-on delay time | 350 | ns | |||
td(off)IO | IN-OUT turn-off delay time | 300 | ns | |||
td(err) | Error signal return delay time VCEerror happen-error signal output | 110 | ns | |||
tmd | Narrow pulse restrained | 100 | ns | |||
VCEstat | Reference voltage for VCEmonitoring VCE=1700V VCE=1200V | 2 - - | 6.8 - - | - 6.2 5.3 | V | |
VLevel | Logic level (External error input; reset signal; modeselect) | +8 | +15 | V | ||
tpReset | Vininput both Low reset time | 10 | μs | |||
tTD | Dead time adjusted from factory (half-bridge interlock mode) | .05* | 5 | μs | ||
CPS | Primary to secondary capacitance | 8 | pf | |||
* Attention! Pins XS.4; XS.45 should not connect to powersupply VSor GND directly，Min.RTDis 1kΩ and corresponding tTDis about 0.05μs.
Company Details
Business Type:
Manufacturer,Exporter,Trading Company,Seller
Year Established:
2001
Ecer Certification：
Active Member
Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ... Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ...
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