BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
| Place of Origin | China |
| Brand Name | power-sem |
| Model Number | PSHI 2522 |
View Detail Information
Explore similar products
PSHI-- 0612 suspend production
High Power IGBT Driver, Dual IGBT Driver, PSHI 0622
PSHI 1222 PSHI 1222F Dual IGBT Driver
PSHI 1522 Dual IGBT Driver
Product Specification
| Place of Origin | China | Brand Name | power-sem |
| Model Number | PSHI 2522 | ||
| High Light | IGBT driver ， driver core | ||
Absolute Maximum Ratings(Ta=25℃ )
Symbol | Term | Values | Unit |
VS MAX. | Max. supply voltage primary | +16 | V |
IS MAX. | Max. supply current primary | 1450 | mA |
PDC/DC | Total power of DC/DC isolation power output | 25 | W |
Vin | Max. PWM input level VinA; VinB | VS+0.5 | V |
ViH | Max. logic signal input voltage (Mode select;reset signal;external error) | VS+0.5 | V |
IOC | Max. logic signal output currect (Open-collector output current) | 10 | mA |
IoutAV | Output average current per channel | 450 | mA |
IoutPEAK | Output peak current per channel | ±80 | A |
VCES | IGBT collector-emitter voltage | 1700 | V |
Visol IO | Isolation voltage IN-OUT(10 sec.AC) | 4000 | V |
Visol AB | Isolation voltage OUT A-OUT B(10 sec.AC) | 4000 | V |
RGon/off min | Minimal Rgon/Rgoff | 0.32 | Ω |
Qout/pulse | Charge per pulse | ±60① | μC |
dv/dt | Rate of rise and fall of voltage | 75 | kV/μs |
fSWmax | Max. working frequency | 50 | kHz |
Top | Operating temperature | -40...+85 | ℃ |
Tstg. | Storage temperatature | -45...+85 | ℃ |
Electrical Characteristics(Ta=25℃ )
Symbol | Term | Parameter | Unit | |||
Min. | Typ. | Max. | Rec. | |||
VS | Supply voltage primary | 14.5 | 15 | 15.5 | 15 | V |
IS | No-load currect primary fSW=0kHz fSW=20kHz fSW=100kHz | - 130 150 180 | mA | |||
VIT+ | Input high level: 15V level 5V level | -- 12 3.2 | V | |||
VIT- | Input low level: 15V level 5V level | -- 4.5 1.9 | V | |||
Rin | Input resistance | 33 | kΩ | |||
VG(on) | Turn-on gate voltage | +15 | V | |||
VG(off) | Turn-off gate voltage | -10 | V | |||
td(on)IO | IN-OUT turn-on delay time | 650 | ns | |||
td(off)IO | IN-OUT turn-off delay time | 600 | ns | |||
td(err) | Error signal return delay time VCEerror happen-error signal output | 110 | ns | |||
tmd | Narrow pulse restrained | 400 | ns | |||
VCEstat | Reference voltage for VCEmonitoring VCE=1700V VCE=1200V | 2 - - | 6.8 - - | - 6.2 5.3 | V | |
VLevel | Logic level (External error input; resetsignal; mode select) | +8 | +15 | V | ||
tpReset | Vininput both Low reset time | 10 | μs | |||
tTD | Dead time adjusted from factory (half-bridge interlock mode) | .05② | 5 | μs | ||
CPS | Primary to secondary capacitance | 12 | pf | |||
① This value can be expanded externally (on adapter board) by pins.
② Attention! Pins XS.3,7 should not connect to power supply VSor GND directly，Min.RTDis 1kΩ and corresponding tTDis about 0.05μs.
● Single or bridge circuit
● Inverter
● Welding machine
● Induction heating
● Converter
● High power UPS
● High power high frequency SMPS
Company Details
Business Type:
Manufacturer,Exporter,Trading Company,Seller
Year Established:
2001
Ecer Certification：
Active Member
Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ... Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ...
Get in touch with us
Leave a Message, we will call you back quickly!