ASIC single IGBT driver,Suitable for all 1700V HM-IGBTs, IGBT gate drive voltage

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Place of Origin	beijing, China
Brand Name	power-sem
Model Number	PSHI 512F17B

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PSHI 512F17B

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Product Specification


Place of Origin	beijing, China	Brand Name	power-sem
Model Number	PSHI 512F17B

1.Feature

● ASIC single IGBT driver
● Suitable for all 1700V HM-IGBTs
● Short circuit and over current protection by V_CEsatmonitoring
● Supply V_GEunder voltage protection(>-7.5V,<+12.5V)
● Error “soft turn-off”
● Dynamic “soft turn-off”+active clamping
● Internal isolated DC/DC power supply
● Isolation voltage 6kVac ● 1min
● ±40A peak current output
● IGBT gate drive voltage +15V/-10V
● 500ns signal conversion time
● 430ns error signal feedback time
● 400ns narrow pulse inhibit
● Max. working frequency 10kHz
● Fiber-optic interface
● Clearance distance from primary side to secondary side is 32mm

2.Parameter

PSHI 512F17B

Absolute Maximum Ratings (Ta=25℃)

Symbol	Term	Values	Unit
V_{S MAX.}	Max. supply voltage primary	+16	V
I_{S MAX.}	Max. supply current primary	350	mA
P_DC/DC	Total power of DC/DC isolation power output	5	W
I_O	Max. logic signal output current	10	mA
I_outAV	Output average current per channel	140	mA
I_outPEAK	Output peak current per channel	±40	A
V_CES	IGBT collector-emitter voltage	1700	V
V_{isol IO}	Isolation voltage IN-OUT(1 minute. AC)	6	kV
R_{Gon/off min}	Minimal R_gon/R_goff	0.65	Ω
Q_out/pulse	Minimal charge per pulse	±50	μC
dv/dt	Rate of rise and fall of voltage	75	kV/μs
f_{SW max}	Max. working frequency	10	kHz
T_op	Operating temperature	-45...+85	℃
T_stg.	Storage temperature	-45...+85	℃

Electrical Characteristics *(Ta=25℃)

Symbol	Term	Parameter				Unit
Symbol	Term	Min.	Typ.	Max.	Rec.	Unit
V_S	Supply voltage primary	14.5	15	15.5	15	V
I_S	No-load current primary f_SW=0 f_SW=10kHz		110 125			mA
V_G(on)	Turn-on gate voltage		+15			V
V_G(off)	Turn-off gate voltage		-10			V
t_d(on)IO	IN-OUT turn-on delay time		500			ns
t_d(off)IO	IN-OUT turn-off delay time		500			ns
t_d(err)	Error correspond time V_CEerror happen-block output		430			ns
t_md	Narrow pulse restrained		400			ns
t_pReset	Error automatic reset time	200				ms
t_p(err)	Error signal pulse width		200			ms
V_CEstat	Reference voltage for V_CEmonitoring	3	7	8	7	V
C_PS	Primary to secondary capacitance		8			pf

*Electrical Characteristics do not contain fiber-optic link and photoelectric conversion parameters (HFBR-2521/HFBR-1521)

3.Application

● Traction
● SVG
● Active power filter
● Medium-voltage converter
● Mine inverter
● Medium-voltage inverter
● Wind-power converter

Company Details

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Business Type:

Manufacturer,Exporter,Trading Company,Seller 
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Year Established:

2001 
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Ecer Certification：

Active Member 

Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ... Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ...

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BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
1/F, No.23 Huoju Street, ChangpingPark, Beijing, China,102200
https://igbtdriver-net.ecer.com/

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