PSHI 0412 C...............

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Place of Origin	China
Brand Name	power-sem
Model Number	PSHI 0412 C

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Product Specification


Place of Origin	China	Brand Name	power-sem
Model Number	PSHI 0412 C
High Light	IGBT driver ， driver core

● ASIC single IGBT driver
● Suitable for all IGBTs up to 1200V/1700V
● Anti-logical control (IGBT turn on when input low level )
● Short circuit and over current protection by VCEsat monitoring
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<13.5V)
●Turn-off spike restrain by “dynamic soft turn-off”
● Internal isolated DC/DC power supply
● ±25A peak current output
● IGBT gate drive voltage+15V/-9V
● 650ns signal conversion time
● 110ns error signal feedback time
● 400ns narrow pulse inhibit eliminate radio
frequency interference
● Max. working frequency 100kHz
● Error chain function, low level active
● Clearance distance from primary side to secondary side is 42mm

Absolute Maximum Ratings(Ta=25℃)

Symbol	Term	Values	Unit
V_{S MAX.}	Max. supply voltage primary	+16	V
I_{S MAX.}	Max. supply current primary	300	mA
P_DC/DC	Total power of DC/DC isolation power output	4	W
V_in	Max. PWM input level	V_S+0.5	V
V_iH	Max. logic signal input voltage (Mode select;reset signal;external error)	V_S+0.5	V
I_OC	Max. logic signal output currect (Open-collector output current)	10	mA
I_outAV	Output average current per channel	160	mA
I_outPEAK	Output peak current per channel	±25	A
V_CES	IGBT collector-emitter voltage	1700	V
V_{isol IO}	Isolation voltage IN-OUT(10 sec.AC)	5000	V
R_{Gon/off min}	Minimal R_gon/R_goff	1	Ω
Q_out/pulse	Charge per pulse	±15^①	μC
dv/dt	Rate of rise and fall of voltage	75	kV/μs
f_{SW max}	Max. working frequency	100	kHz
T_op	Operating temperature	-40...+85	℃
T_stg.	Storage temperatature	-45...+85	℃

Electrical Characteristics(Ta=25℃ )

Symbol	Term	Parameter				Unit
Symbol	Term	Min.	Typ.	Max.	Rec.	Unit
V_S	Supply voltage primary	14.5	15	15.5	15	V
I_S	No-load currect primary f_SW= 0kHz f_SW=20kHz f_SW=100kHz		80 100 130			mA
V_IT+	Input high level: 15V level 5V level	12 3.2				V
V_IT－	Input low level: 15V level 5V level			4.5 1.9		V
R_in	Input resistance		33k			Ω
V_G(on)	Turn-on gate voltage		+15			V
V_G(off)	Turn-off gate voltage		-9			V
t_d(on)IO	IN-OUT turn-on delay time		650			ns
t_d(off)IO	IN-OUT turn-off delay time		600			ns
t_d(err)	Error signal return delay time V_CEerror happen-error signal output		110			ns
t_md	Narrow pulse restrained		400			ns
V_CEstat	Reference voltage for V_CEmonitoring V_CE=1700V V_CE=1200V	2		6.8	6.2 5.3	V
V_Level	Logic level (External error input; reset signal; mode select)		+8		+15	V
C_PS	Primary to secondary capacitance		12			pf

① This value can be expanded externally (on adapter board) by pins.

application;

● Induction heating
● Parallel resonant power supply

Company Details

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Business Type:

Manufacturer,Exporter,Trading Company,Seller 
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Year Established:

2001 
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Ecer Certification：

Active Member 

Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ... Beijing Power-sem Electronic Technique Co.,Ltd was founded in 2001,which is a professional supplier focusing on developing,manufacturing and providing power electronic parts.Our Drives Department was established in 2003,which specialized in design and manufacture of IGBT drives.With the development ...

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BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.
1/F, No.23 Huoju Street, ChangpingPark, Beijing, China,102200
https://igbtdriver-net.ecer.com/

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