Shenzhen Hongxinwei Technology Co., Ltd
| Payment Terms | T/T, Western Union |
| Supply Ability | 8000pcs/week |
| Delivery Time | 2-3DAYS |
| Packaging Details | 800pcs/reel |
| Product Category | MOSFET |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 192A |
| Rds On - Drain-Source Resistance | 4.2 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 170 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 441W |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Width | 6.22 mm |
| Forward Transconductance - Min | 278 S |
| Fall Time | 100 ns |
| Rise Time | 97 ns |
| Typical Turn-Off Delay Time | 110 ns |
| Typical Turn-On Delay Time | 17 ns |
| Factory Pack Quantity | 800 |
| Brand Name | INFINEON |
| Model Number | IRF100S201 |
| Certification | ROHS |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T, Western Union | Supply Ability | 8000pcs/week |
| Delivery Time | 2-3DAYS | Packaging Details | 800pcs/reel |
| Product Category | MOSFET | Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 192A | Rds On - Drain-Source Resistance | 4.2 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 170 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 441W |
| Height | 2.3 mm | Length | 6.5 mm |
| Width | 6.22 mm | Forward Transconductance - Min | 278 S |
| Fall Time | 100 ns | Rise Time | 97 ns |
| Typical Turn-Off Delay Time | 110 ns | Typical Turn-On Delay Time | 17 ns |
| Factory Pack Quantity | 800 | Brand Name | INFINEON |
| Model Number | IRF100S201 | Certification | ROHS |
| Place of Origin | CHINA | ||
| High Light | IR N Channel MOSFET ，BLDC Motor N Channel MOSFET ，192A IR MOSFET | ||
1. Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
2. Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
3.HEXFET® Power MOSFET
4.Why choose us?
100% new and originao with Advantage price
High efficiency
Fast Delivery
Professional team service
10 Years Experience Electronic components
Electronic components Agent
Advantage logistic discount
Excellent After-sales Service
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
1998
Total Annual:
50000000-70000000
Employee Number:
100~200
Ecer Certification：
Site Member
Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...
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