Shenzhen Hongxinwei Technology Co., Ltd
| Payment Terms | T/T, Western Union |
| Supply Ability | 10000PCS/WEEK |
| Delivery Time | 2-3DAYS |
| Packaging Details | 2500PC/REEL |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 13 A |
| Rds On - Drain-Source Resistance | 9.3 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 96 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 2.5W |
| Height | 1.75 mm |
| Length | 4.9 mm |
| Transistor Type | 1P Channel |
| Width | 3.9 mm |
| Fall Time | 92 ns |
| Rise Time | 15 ns |
| Typical Turn-Off Delay Time | 210 ns |
| Typical Turn-On Delay Time | 13 ns |
| Factory Pack Quantity | 2500 |
| Brand Name | ON |
| Model Number | FDS6679AZ |
| Certification | ROHS |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T, Western Union | Supply Ability | 10000PCS/WEEK |
| Delivery Time | 2-3DAYS | Packaging Details | 2500PC/REEL |
| Technology | Si | Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 13 A | Rds On - Drain-Source Resistance | 9.3 mOhms |
| Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 96 nC | Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 2.5W |
| Height | 1.75 mm | Length | 4.9 mm |
| Transistor Type | 1P Channel | Width | 3.9 mm |
| Fall Time | 92 ns | Rise Time | 15 ns |
| Typical Turn-Off Delay Time | 210 ns | Typical Turn-On Delay Time | 13 ns |
| Factory Pack Quantity | 2500 | Brand Name | ON |
| Model Number | FDS6679AZ | Certification | ROHS |
| Place of Origin | CHINA | ||
| High Light | FDS6679AZ Power Management Integrated Circuits ，2.5W Power Management Integrated Circuits ，1P Channel Load Switching IC | ||
FDS6679AZ MOSFET -30V P-Channel PowerTrench MOSFET This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs
1.General Description
This P-Channel MOSFET is producted using ONSemiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computersand Portable Battery Packs
2.Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely lowrDS(on)
High power and current handing capability
RoHS Compliant
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
1998
Total Annual:
50000000-70000000
Employee Number:
100~200
Ecer Certification：
Site Member
Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...
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