Payment Terms | T/T, Western Union |
Supply Ability | 50000pcs |
Delivery Time | 2-3days |
Packaging Details | 250pcs/reel |
Vds- drain-source breakdown voltage | 65 V |
Rds On-Drain-source on resistance | 190 mOhms |
Gain | 16.5 dB |
Output power | 150W |
Maximum operating temperature | + 225 C |
Operating frequency | 2300 MHz to 2400 MHz |
Number of channels | 2 Channel |
Factory packing quantity | 250 |
Brand Name | INFINEON |
Model Number | PXAC241702FC-V1-R250 |
Certification | ROHS |
Place of Origin | CHINA |
View Detail Information
Explore similar products
Texas Instruments IGBT Module TPS3809K33DBVR Monitoring Circuit 2.93V Volt Sup
55V 131A 5.3m Ohm 170nC Electronic Integrated Circuits Infineon IRF1405STRLPBF
Fixed Inductor 0.68uH 20% Electronic Integrated Circuits TDK SPM4015T-R68M
Non Isolated DC DC Converter 9-36V in 3-18V out 5A Neg Logic SMT ABB APXW005A0X3
Product Specification
Payment Terms | T/T, Western Union | Supply Ability | 50000pcs |
Delivery Time | 2-3days | Packaging Details | 250pcs/reel |
Vds- drain-source breakdown voltage | 65 V | Rds On-Drain-source on resistance | 190 mOhms |
Gain | 16.5 dB | Output power | 150W |
Maximum operating temperature | + 225 C | Operating frequency | 2300 MHz to 2400 MHz |
Number of channels | 2 Channel | Factory packing quantity | 250 |
Brand Name | INFINEON | Model Number | PXAC241702FC-V1-R250 |
Certification | ROHS | Place of Origin | CHINA |
High Light | 150W Metal Oxide Semiconductor ,RF MOSFET Metal Oxide Semiconductor ,RFP-LD10M |
PXAC241702FC-V1-R250 RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RFP-LD10M
Description
ThePXAC241702FC is a 28 V LDMOS FET with an asym metrical design intended for use in multi-standard cellular power amplifier ap-plications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions!4600 Silicon Drive | Durham, NC 27703 03, 2018-07-03PXAC241702FC Package H-37248-4Thermally-Enhanced High Power RF LDMOS FET150 W, 28 V, 2300 – 2400 MHzFeatures• Asymmetrical Doherty design - Main: P1dB = 60 W Typ- Peak: P1dB = 90 W Typ • Broadband internal input and output matching • Typical pulsed CW performance, 2350 MHz, 28 V, Doherty configuration - Output power at P1dB = 100 W- Efficiency = 49% - Gain = 17.5 dB• Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)• Capable of handling 10:1 VSWR @28 V, 120 W (CW) output power• Low thermal resistance• Pb-free and RoHS complian
Q1. What is your terms of packing?
A: Generally, we pack our goods in neutral white boxes and brown cartons.
If you have legally registered patent, we can pack the goods in your branded boxes after getting your authorization letters.
Q2. What is your MOQ?
A: We provide you small MOQ for each item, it depends your specific order!
Q3. Do you test or check all your goods before delivery?
A: Yes, we have 100% test and check all goods before delivery.
Q4: How do you make our business long-term and good relationship?
We keep good quality and competitive price to ensure our customers benefit ;
We respect every customer as our friend and we sincerely do business and make friends with them,It's not something that can be replaced.
Q5: How to contact us?
A: Send your inquiry details in the below,Click "Send"Now!!!
Shenzhen Hongxinwei Technology Co., Ltd
To adopt new technology,to produce products of quality,to offer high-class service.
Improve the management system continuously to meet customer requirement for high-quality products and services.
Why choose us?
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
1998
Total Annual:
50000000-70000000
Employee Number:
100~200
Ecer Certification:
Site Member
Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...
Get in touch with us
Leave a Message, we will call you back quickly!