Shenzhen Hongxinwei Technology Co., Ltd
| Payment Terms | T/T, Western Union |
| Supply Ability | 3000PCS/WEEK |
| Delivery Time | 2-3DAYS |
| Packaging Details | 1000PCS/TUBE |
| Technology | Si |
| Mounting Style | Through Hole |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Id - Continuous Drain Current | 12 A |
| Rds On - Drain-Source Resistance | 350 mOhms |
| Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Qg - Gate Charge | 39 nC |
| Minimum Operating Temperature | - 65 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 160 W |
| Channel Mode | Enhancement |
| Configuration | Single |
| Forward Transconductance - Min | 5.5 S |
| Height | 9.15 mm |
| Length | 10.4 mm |
| Width | 4.6 mm |
| Rise Time | 10 ns |
| Typical Turn-On Delay Time | 20 ns |
| Factory packing quantity | 1000 |
| Brand Name | ST |
| Model Number | STP12NM50 |
| Certification | ROHS |
| Place of Origin | Morocco |
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Product Specification
| Payment Terms | T/T, Western Union | Supply Ability | 3000PCS/WEEK |
| Delivery Time | 2-3DAYS | Packaging Details | 1000PCS/TUBE |
| Technology | Si | Mounting Style | Through Hole |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 12 A |
| Rds On - Drain-Source Resistance | 350 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V | Qg - Gate Charge | 39 nC |
| Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 160 W | Channel Mode | Enhancement |
| Configuration | Single | Forward Transconductance - Min | 5.5 S |
| Height | 9.15 mm | Length | 10.4 mm |
| Width | 4.6 mm | Rise Time | 10 ns |
| Typical Turn-On Delay Time | 20 ns | Factory packing quantity | 1000 |
| Brand Name | ST | Model Number | STP12NM50 |
| Certification | ROHS | Place of Origin | Morocco |
1.Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
2.Description
These N-channel Power MOSFETs are developed using STMicroelectronics'revolutionary MDmesh technology, which associates the multiple drain process withthe company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST'sproprietary strip technique, these Power MOSFETs boast an overall dynamicperformance which is superior to similar products on the market
3.Applications
Switching applications
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
1998
Total Annual:
50000000-70000000
Employee Number:
100~200
Ecer Certification：
Site Member
Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...
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