Shenzhen Hongxinwei Technology Co., Ltd
| Payment Terms | T/T, Western Union |
| Supply Ability | 18000PCS/WEEk |
| Delivery Time | 2-3DAYS |
| Packaging Details | 3000PCS/REEL |
| Product Category | MOSFET |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 3 A |
| Rds On - Drain-Source Resistance | 165 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 9.5 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.25 W |
| Channel Mode | Enhancement |
| Height | 1.1 mm |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Factory packing quantity | 3000 |
| Brand Name | Infineon / IR |
| Model Number | IRLML5203TRPBF |
| Certification | ROHS |
| Place of Origin | CHIAN |
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Product Specification
| Payment Terms | T/T, Western Union | Supply Ability | 18000PCS/WEEk |
| Delivery Time | 2-3DAYS | Packaging Details | 3000PCS/REEL |
| Product Category | MOSFET | Technology | Si |
| Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 3 A |
| Rds On - Drain-Source Resistance | 165 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 9.5 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 1.25 W | Channel Mode | Enhancement |
| Height | 1.1 mm | Length | 2.9 mm |
| Width | 1.3 mm | Factory packing quantity | 3000 |
| Brand Name | Infineon / IR | Model Number | IRLML5203TRPBF |
| Certification | ROHS | Place of Origin | CHIAN |
IRLML5203TRPBF Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl
1.Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
RoHS Compliant, Halogen-Free
2.Description
These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the extremely lowon-resistance per silicon area. This benefit provides thedesigner with an extremely efficient device for use in batteryand load management applications.
A thermally enhanced large pad leadframe has beenincorporated into the standard SOT-23 package to produce aHEXFET Power MOSFET with the industry's smallest footprint.This package, dubbed the Micro3TM, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micro3 allows it to fit easily intoextremely thin application environments such as portableelectronics and PCMCIA cards. The thermal resistance andpower dissipation are the best available
3.
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
1998
Total Annual:
50000000-70000000
Employee Number:
100~200
Ecer Certification：
Site Member
Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...
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